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Improved off-Characteristics of a-Si Vertical-Type Mosfets
Published online by Cambridge University Press: 26 February 2011
Abstract
We propose a new structure of vertical a-Si FET with the intermediate layer between the source and drain consisting of the multi-layer structure. The mechanism of off-current in short-channel vertical-type a-Si FET is discussed. The multilayered structure is incorporated in an attempt to reduce the back gate effect. The preliminary experimental results are also presented.
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- Research Article
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- Copyright © Materials Research Society 1988
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