Hostname: page-component-76fb5796d-dfsvx Total loading time: 0 Render date: 2024-04-26T03:03:41.551Z Has data issue: false hasContentIssue false
  • English
  • Français

Improved Nickel Silicide Ohmic Contacts to N-Type 4H and 6H-SiC Using Nichrome

Published online by Cambridge University Press:  15 February 2011

E. D. Luckowski ,
J. R. Williams ,
M. J. Bozack ,
T. Isaacs-Smith  and
J. Crofton
E. D. Luckowski
Affiliation:
Physics Department, Auburn University, AL 36849
J. R. Williams
Affiliation:
Physics Department, Auburn University, AL 36849
M. J. Bozack
Affiliation:
Physics Department, Auburn University, AL 36849
T. Isaacs-Smith
Affiliation:
Physics Department, Auburn University, AL 36849
J. Crofton
Affiliation:
Department of Physics, Murray State University, Box 9, Murray, KY 42071
Get access

Abstract

Results are reported for ohmic contacts formed on n-type 4H and 6H-SiC using nichrome (80/20 weight percent Ni/Cr). In comparison to contacts formed on 6H-SiC using pure Ni, the electrical characteristics of these NiCr contacts are similar (∼ 1E-5 Ω-cm2 for moderately doped material), and composite Au/NiCr contacts exhibit good stability during long-term anneals (∼ 2500 hr) at 300 C without the requirement of a diffusion barrier layer between the ohmic contact layer and the Au cap layer. The use of NiCr also results in success rates near 100% for direct wire bonding to the Au cap layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 423: Symposium E – III-Nitride, SiC, and Diamond Materials for Electronic , 1996 , 119
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Crofton, J., Ferrero, J. M., Barnes, P. A., Williams, J. R., Bozack, M. J., Tin, C. C., Ellis, C. D., Spitznagel, J. A. and McMullin, P. G., in Amorphous and Crystalline Silicon Carbide IV, edited by Yang, C. Y., Rahman, M. M. and Harris, G. L. (Springer, Berlin, 1992) p. 176.Google Scholar
2. Gardner, C. T., Cooper, J. A., Melloch, M. R., Palmour, J. W. and Carter, C. H., p. 338.Google Scholar
3. Adams, S., Severt, C., Lenord, J., Liu, S. and Smith, S. R., Trans. Second Int'l. High temperature Electronics Conference. edited by King, D. B. and Thome, F. V. (1994) p. XIII–9.Google Scholar
4. Stekl, A. J., Su, J. N., Yih, P. H., Yuan, C. and Li, J. P., Amorphous and Crystalline Silicon Carbide V, edited by Spencer, M. G., Devaty, R. P., Edmond, J. A., Kahn, A., and Rahman, M. M. (IOP Conf. Series No. 137, 1994) p. 653.Google Scholar
5. Crofton, J., McMullin, P. G., Williams, J. R. and Bozack, M. J., J. Appl. Phys. 77(3), 1317 (1995).Google Scholar
6. Crofton, J., Luckowski, E. D., Williams, J. R., Isaacs-Smith, T., Bozack, M. J. and Siergiej, R, Proc. Sixth Int'l. Conf, on SiC and Related Materials, in press.Google Scholar
7. Berger, H. H., Solid State Electronics 15, 145 (1972).Google Scholar
8. Doolittle, L. R., Nucl. Instrs. Meths. in Phys. Res. B9, 344 (1985).Google Scholar