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Improved Interference Filter Structures Made of Porous Silicon

Published online by Cambridge University Press:  15 February 2011

M. Thönissen
Affiliation:
KFA Jülich, ISI, D-52425 Jülich, Germany
M. G. Berger
Affiliation:
KFA Jülich, ISI, D-52425 Jülich, Germany
M. Krüger
Affiliation:
KFA Jülich, ISI, D-52425 Jülich, Germany
W. Theiβ
Affiliation:
RWTH Aachen, I. Physik. Inst., D-52056 Aachen, Germany
S. Hilbrich
Affiliation:
RWTH Aachen, I. Physik. Inst., D-52056 Aachen, Germany
R. Arens-Fischer
Affiliation:
KFA Jülich, ISI, D-52425 Jülich, Germany
S. Billar
Affiliation:
KFA Jülich, ISI, D-52425 Jülich, Germany
H. Lüth
Affiliation:
KFA Jülich, ISI, D-52425 Jülich, Germany
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Abstract

Recently passive optical devices like filter structures or waveguides based on porous silicon have attracted high interest due to their easy and cheap fabrication. We have formed interference filters using porous silicon by changing the current density during formation. For the specific design of these filter structures a calibration of the etch rate and the refractive indices is required. Therefore we have determined the effective dielectric function for different substrate doping levels and anodization current densities by fitting reflectance spectra. Based on these results different kinds of reflectance filters consisting of discrete layers (Bragg reflectors, Fabry-Perot filters) as well as filters with a continuous change of the refractive indices with depth (rugate-filters) can be realised. Furthermore we present applications of these filter structures such as anti-reflectance coatings and high quality mirrors.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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References

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