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Improved Hole Diffusion Lengths in Bulk n-Type GaAs for High Efficiency Solar Cells

Published online by Cambridge University Press:  25 February 2011

D. Wong ,
T. E. Schlesinger  and
A. G. Milnes
D. Wong
Affiliation:
Department of Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh PA15213
T. E. Schlesinger
Affiliation:
Department of Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh PA15213
A. G. Milnes
Affiliation:
Department of Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh PA15213
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Abstract

A method for wafer annealing which is effective in suppressing defects and raising minority carrier diffusion lengths in n-type bulk GaAs is described. The beneficial effect of the annealing is shown to be associated with the proximity surface with measurements of photoresponse as a function of depth. The concentration of the hole trap HCX (Ev+0.29eV) varies as a function of depth from the surface, qualitatively, as might be expected of the concentration of the dominant recombination center in the material. The impact of improving the material in this manner on the performance of Zn diffused solar cells is demonstrated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 997
Copyright
Copyright © Materials Research Society 1990

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