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Improved Electrical Performance of a-Si:H Thin Film Transistors, TFTs with n+ (μc-Si Contact, and Silicon Oxide and Nitride Dual-Layer Dielectrics

Published online by Cambridge University Press:  01 January 1993

S.S. He ,
D.J. Stephens  and
G. Lucovsky
S.S. He
Affiliation:
Departments of Physics, Materials Science and Engineering, Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-8202, USA
D.J. Stephens
Affiliation:
Departments of Physics, Materials Science and Engineering, Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-8202, USA
G. Lucovsky
Affiliation:
Departments of Physics, Materials Science and Engineering, Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695-8202, USA
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Abstract

We report the use of heavily-doped n-type μc-Si as a source and drain contacts in a-Si:H TFTs. Dual-layer dielectrics comprised of SiO2 and Si3N4 layers are employed, and the back channel regions are passivated to prevent depletion region formation. We have compared the electrical performance of TFTs with n+ a-Si source and drain contacts and n+ μc-Si source and drain contacts, relating some differences in performance to the properties of the source and drain materials. In addition we discuss the fabrication and performance of TFT structures that include B-compensated i-μc-Si channel regions and heavily-doped n+ μc-Si source and drain contacts.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 871
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

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