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Improved Device Performance of In0.5Ga0.5P/In0.22Ga0.78As/GaAs MOS p-HEMT using a Selective Liquid Phase Oxidation

Published online by Cambridge University Press:  11 February 2011

I-H Kang ,
J-W Lee ,
S-J Kang ,
S-J Jo ,
S-K In ,
H-J Song ,
J-H Kim  and
J-I Song
I-H Kang
Affiliation:
High-Speed IC Lab., Department of Information and Communication, Kwangju Institute of Science and Technology, Oryong-dong 1, Buk-gu, Gwangju, Korea
J-W Lee
Affiliation:
High-Speed IC Lab., Department of Information and Communication, Kwangju Institute of Science and Technology, Oryong-dong 1, Buk-gu, Gwangju, Korea
S-J Kang
Affiliation:
High-Speed IC Lab., Department of Information and Communication, Kwangju Institute of Science and Technology, Oryong-dong 1, Buk-gu, Gwangju, Korea
S-J Jo
Affiliation:
High-Speed IC Lab., Department of Information and Communication, Kwangju Institute of Science and Technology, Oryong-dong 1, Buk-gu, Gwangju, Korea
S-K In
Affiliation:
High-Speed IC Lab., Department of Information and Communication, Kwangju Institute of Science and Technology, Oryong-dong 1, Buk-gu, Gwangju, Korea
H-J Song
Affiliation:
High-Speed IC Lab., Department of Information and Communication, Kwangju Institute of Science and Technology, Oryong-dong 1, Buk-gu, Gwangju, Korea
J-H Kim
Affiliation:
High-Speed IC Lab., Department of Information and Communication, Kwangju Institute of Science and Technology, Oryong-dong 1, Buk-gu, Gwangju, Korea
J-I Song
Affiliation:
High-Speed IC Lab., Department of Information and Communication, Kwangju Institute of Science and Technology, Oryong-dong 1, Buk-gu, Gwangju, Korea
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Abstract

The DC and RF characteristics of In0.5Ga0.5P/In0.22Ga0.78As/GaAs MOS p-HEMTs with different gate oxide thickness were investigated and compared with those of Schottky-gate p-HEMT without the gate oxide layer. The oxide layer was implemented by using a liquid phase oxidation technique. It was found that transconductance (gm), threshold voltage and breakdown voltage characteristics of MOS p-HEMTs depended strongly on the gate oxide thickness. The MOS p-HEMTs showed superior DC and RF performances compared with those of GaAs-based MOSFET having oxide/n-GaAs or oxide/InGaAs interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 744: Symposium M – Progress in Semiconductors II–Electronic and Optoelectronic Applications , 2002 , M8.4
Copyright
Copyright © Materials Research Society 2003

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References

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