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The Importance Of Pairing Reactions For The Modeling Of Defect-Dopant Interactions In Silicon

  • I. Bork (a1), A. v. Schwerin (a1) and Siemens AG (a1)

Abstract

In this article it is shown that the reactions between dopants and point defects in silicon are slow enough to play a significant role for low temperature transient enhanced diffusion (TED). As a consequence, diffusion models based on the assumption of local equilibrium between dopants and dopant-defect pairs highly overestimate TED at temperatures below 800°C. Without this assumption, i.e. when full dynamic pairing of dopants is included in simulations, good agreement to experimental results is achieved.

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The Importance Of Pairing Reactions For The Modeling Of Defect-Dopant Interactions In Silicon

  • I. Bork (a1), A. v. Schwerin (a1) and Siemens AG (a1)

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