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Impacts of Temperature and Reactant Flow Rate Transients on LPCVD Tungsten Silicide Film Properties

Published online by Cambridge University Press:  28 February 2011

T. S Cale ,
J.-H. Park ,
G. B. Raupp  and
M. K. Jain
T. S Cale
Affiliation:
Department of Chemical, Bio & Materials Engineering and Center for Solid State Electronics Research, Arizona State University, Tempe, AZ 85287-6006
J.-H. Park
Affiliation:
Department of Chemical, Bio & Materials Engineering and Center for Solid State Electronics Research, Arizona State University, Tempe, AZ 85287-6006
G. B. Raupp
Affiliation:
Department of Chemical, Bio & Materials Engineering and Center for Solid State Electronics Research, Arizona State University, Tempe, AZ 85287-6006
M. K. Jain
Affiliation:
Department of Chemical, Bio & Materials Engineering and Center for Solid State Electronics Research, Arizona State University, Tempe, AZ 85287-6006
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Abstract

A transient model of a stagnation point flow, single wafer reactor is used to predict the concentrations of tungsten hexafluoride and dichlorosilane as a function of position along the surface of a six inch wafer during the transient and steady state operating phases of tungsten silicide deposition in trenches having an initial aspect ratio of five. We analyze two startup protocols: 1. The susceptor temperature setpoint is changed from just above room temperature to its steady state value after the reactant flows are established. 2. The reactant flowmeter setpoints are changed to their steady state values after the wafer temperature is established in a flow of inert gas. A ballistic transport and reaction model is used to predict film thickness and composition profiles of these tungsten silicide films as a function of deposition time. The transient portions of the two startup protocols do not affect film profiles or average composition as much as the inherent increase in aspect ratio as the fill proceeds.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 224: Symposium F – Rapid Thermal and Integrated Processing I , 1991 , 171
Copyright
Copyright © Materials Research Society 1991

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References

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