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Impact of the Growth Polar Direction on the Optical Properties of Gan Films Grown by Metalorganic Vapor Phase Epitaxy

Published online by Cambridge University Press:  17 March 2011

A. Setoguchi ,
K. Yoshimura ,
M. Sumiya ,
A. Uedono  and
S. F. Chichibu
A. Setoguchi
Affiliation:
Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan On leave from Department of Electrical Engineering, Science University of Tokyo, 2641 Yamazaki, Noda, Chiba 278-8510, Japan
K. Yoshimura
Affiliation:
Department of Electrical and Electronic Engineering, Shizuoka University, 3-5-1 Johoku, Hamamatsu, Shizuoka 432-8561, Japan
M. Sumiya
Affiliation:
Department of Electrical and Electronic Engineering, Shizuoka University, 3-5-1 Johoku, Hamamatsu, Shizuoka 432-8561, Japan
A. Uedono
Affiliation:
Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan
S. F. Chichibu
Affiliation:
Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan On leave from Department of Electrical Engineering, Science University of Tokyo, 2641 Yamazaki, Noda, Chiba 278-8510, JapanContacting author, chichibu@bk.tsukuba.ac.jp
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Abstract

The growth polar direction during metalorganic chemical vapor phase epitaxy of wurtzite GaN films was shown to affect the optical properties in terms of impurity and vacancy-type defect incorporation during the growth. The GaN film grown towards the Ga- face (0001) (+c polarity) exhibited clear excitonic features in its optical absorption and luminescence spectra up to room temperature. Conversely, the film with the N-face (000-1) (-c polarity) exhibited a broad emission band, which is located in the broadened absorption tail. The Stokes shift remained even at 300 K. The difference between the two was explained in terms of the presence of impurity-induced band tail states in –c GaN due to increased impurity density and enhanced incorporation of large volume vacancy-type defects, which were confirmed by secondary ion mass spectrometry [Sumiya et al., Appl. Phys. Lett. 76, 2098 (2000)] and monoenergetic slow positron annihilation technique.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G11.6
Copyright
Copyright © Materials Research Society 2001

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References

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