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Impact of Pore Size and Morphology of Porous Organosilicate Glasses on Integrated Circuit Manufacturing

Published online by Cambridge University Press:  01 February 2011

Mark O'Neill ,
Mary K Haas ,
Brian K Peterson ,
Raymond N Vrtis ,
Scott J Weigel ,
Dingjun Wu ,
Mark D Bitner  and
Eugene J Karwacki
Mark O'Neill
Affiliation:
oneillml@airproducts.com, Air Products & Chemicals, Inc, Electronics Technology, 7201 Hamilton Blvd., Allentown, PA, 18195, United States, 610-481-5096, 610-481-5361
Mary K Haas
Affiliation:
HAASMK@airproducts.com, Air Products & Chemicals, Inc, Electronics Technology, 7201 Hamilton Blvd., Allentown, PA, 18195, United States
Brian K Peterson
Affiliation:
PETERSBK@airproducts.com, Air Products & Chemicals, Inc, Computational Modeling Center, 7201 Hamilton Blvd., Allentown, PA, 18195, United States
Raymond N Vrtis
Affiliation:
VRTISRN@airproducts.com, Air Products & Chemicals, Inc, Electronics Technology, 7201 Hamilton Blvd., Allentown, PA, 18195, United States
Scott J Weigel
Affiliation:
WEIGELSJ@airproducts.com, Air Products & Chemicals, Inc, Electronics Technology, 7201 Hamilton Blvd., Allentown, PA, 18195, United States
Dingjun Wu
Affiliation:
WUD@airproducts.com, Air Products & Chemicals, Inc, Electronics Technology, 7201 Hamilton Blvd., Allentown, PA, 18195, United States
Mark D Bitner
Affiliation:
BITNERMD@airproducts.com, Air Products & Chemicals, Inc, Electronics Technology, 7201 Hamilton Blvd., Allentown, PA, 18195, United States
Eugene J Karwacki
Affiliation:
KARWACEJ@airproducts.com, Air Products & Chemicals, Inc, Electronics Technology, 7201 Hamilton Blvd., Allentown, PA, 18195, United States
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Abstract

Porous organosilicate materials produced by plasma enhanced chemical vapor deposition are the leading candidates for back-end-of-line dielectric insulators for IC manufacturing at 45nm design features and beyond. The properties of porous organosilicate glass films of dielectric constant k=2.50 ± 0.05 formed using diethoxymethylsilane and five different porogen precursors with an ultraviolet post treatment are reported. By varying the porogen precursor type pore sizes of 1-2 nm (equivalent spherical diameter) and porosities in the range of 24-31% were measured. While there were no observable trends in pore size with the molecular volume or plasma reactivity of the porogen precursor, modulus values ranged from 6.6 to 10.8 GPa. Porous films with the highest mechanical properties were found to have the highest matrix dielectric constant, highest network connectivity (lowest methyl content), and highest density. Within this process space, maximizing the network connectivity of the film was found to be more important to mechanical properties than lowering the total porosity. In effect, the choice of porogen precursor dictates the film morphology through its impact on the organosilicate glass matrix and pore size.

Keywords

dielectric propertieschemical vapor deposition (CVD) (deposition)microelectronics
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 914: Symposium F – Materials, Technology and Reliability of Low-k Dielectrics and Copper Interconnects , 2006 , 0914-F01-02
Copyright
Copyright © Materials Research Society 2006

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