Skip to main content Accessibility help

Impact of Pore Size and Morphology of Porous Organosilicate Glasses on Integrated Circuit Manufacturing

  • Mark O'Neill (a1), Mary K Haas (a2), Brian K Peterson (a3), Raymond N Vrtis (a4), Scott J Weigel (a5), Dingjun Wu (a6), Mark D Bitner (a7) and Eugene J Karwacki (a8)...


Porous organosilicate materials produced by plasma enhanced chemical vapor deposition are the leading candidates for back-end-of-line dielectric insulators for IC manufacturing at 45nm design features and beyond. The properties of porous organosilicate glass films of dielectric constant k=2.50 ± 0.05 formed using diethoxymethylsilane and five different porogen precursors with an ultraviolet post treatment are reported. By varying the porogen precursor type pore sizes of 1-2 nm (equivalent spherical diameter) and porosities in the range of 24-31% were measured. While there were no observable trends in pore size with the molecular volume or plasma reactivity of the porogen precursor, modulus values ranged from 6.6 to 10.8 GPa. Porous films with the highest mechanical properties were found to have the highest matrix dielectric constant, highest network connectivity (lowest methyl content), and highest density. Within this process space, maximizing the network connectivity of the film was found to be more important to mechanical properties than lowering the total porosity. In effect, the choice of porogen precursor dictates the film morphology through its impact on the organosilicate glass matrix and pore size.



Hide All
1 O'Neill, M.L., Vrtis, R.N., Vincent, J.L., Lukas, A.S., Karwacki, E.J., Peterson, B.K., Bitner, M.D., MRS Symposium Proceedings 766, 321 (2003)
2 Lee, G.Y., Edelstein, D.C., Dobuzinsky, D., Feng, G., Dev, K., Low, K.-S., Shafer, P., Wrschka, P., Conti, R., Schutz, R., Cote, W., 198th Annual Electrochemical Society Meeting, H–1 #531 (2000)
3 O'Neill, M.L., Lukas, A.S., Vrtis, R.N., Vincent, J.L., Peterson, B.K., Bitner, M.D., and Karwacki, E.J., Semiconductor International 25(6), 93 (2002)
4 Vincent, J.L., O'Neill, M.L., Withers, H.P., Beck, S.E., Vrtis, R.N., U.S. Patent # 6,583,048 (24 June 2003)
5 Matsuki, N., Naito, Y., Morisada, Y., Matsunoshita, A., U.S. Patent # 6,352,945 (5 March 2002)
6 Cleemput, P.A. Van, Laxman, R.K., Shu, J., Schulberg, M., Nie, B., U.S. Patent # 6,340,628 (22 January 2002)
7 Cheung, D., Yau, W-F., Mandal, R.P., Jeng, S-P., Liu, K-W, Lu, Y-C, Barnes, M., Willecke, R.B., Moghadam, F., Ishikawa, T., Poon, T.W., U.S. Patent #6,348,725 (19 February 2002)
8 O'Neill, M.L., Lukas, A.S., Vrtis, R.N., Bitner, M.D., Karwacki, E.J., Vincent, J.L., Peterson, B.K., presented at the 2003 American Vacuum Society National Meeting, Baltimore, MD (2003), unpublished
9 Vrtis, R.N., O'Neill, M.L., Vincent, J.L., Lukas, A.S., Xiao, M., Norman, J.A.T., U.S. Patent # 6,846,515 (25 January 2005)
10 Vrtis, R.N., O'Neill, M.L., Vincent, J.L., Lukas, A.S., Peterson, B.K., Bitner, M.D., Karwacki, E.J., MRS Symposium Proceedings 766, 259 (2003)
11 Gidley, D.W., Peng, H.–G., Vallery, R.S., Annu. Rev. Mater. Res. 36, 49 (2006)
12 Gidley, D.W., Lynn, K.G., Petkov, M.P., Weber, M.H., Sun, J.N., Lee, A.F., in New Direction in Antimatter Chemistry and Physics (Kluwer Acad. Pub. 2001) p. 151
13 Baklanov, M.R., Mogilnikov, K.P., Microelectronic Eng. 64, 335 (2002)
14 Yasuda, Y., Plasma Polymerization (Academic Press, Orlando, Florida, 1985)
15 Kingery, W. D., Introduction to Ceramics, 2nd ed. (Wiley, New York, 1976); Phil. Trans. R. Soc. Lond. 203, 385 (1904)
16 Grill, A., Neumayer, D.A., J. App. Phys., 94(10), 6697 (2003)
17 Munro, R.G., Journal of Research of the National Institute of Standards and Technology, 109, 497 (2004)
18 Various references in Rigidity Theory and Applications, edited by Thorpe, M.F., Duxbury, P.M., (Kluwer Academic, New York, 1999)
19 Boolchand, P., Zhang, M., Goodman, B., Phys. Rev. B, 53, 11488 (1995)
20 Hashin, Z., Shtrikman, S., J. Mech. Phys. Solids, 11, 127 (1963)
21 Scher, H., Zallen, R.J., J. Chem. Phys., 53, 3759 (1970)
22 Torquato, S., Random Heterogeneous Materials, (Springer, New York, 2002)
23 Miller, R.D., Beyers, R., carter, K.R., Cook, R.F., Harbison, M., Hawker, C.J., Hedrick, J.L., Lee, V., Liniger, E., Nguyen, C., Remenar, J., Sherwood, M., Trollsas, M., Volksen, W., Yoon, D.Y., MRS Symposium Proceedings 565, 3 (1999)


Related content

Powered by UNSILO

Impact of Pore Size and Morphology of Porous Organosilicate Glasses on Integrated Circuit Manufacturing

  • Mark O'Neill (a1), Mary K Haas (a2), Brian K Peterson (a3), Raymond N Vrtis (a4), Scott J Weigel (a5), Dingjun Wu (a6), Mark D Bitner (a7) and Eugene J Karwacki (a8)...


Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed.