Hostname: page-component-848d4c4894-4rdrl Total loading time: 0 Render date: 2024-07-01T01:37:51.586Z Has data issue: false hasContentIssue false
  • English
  • Français

Impact of Backend Processing on Integrated Ferroelectric Capacitor Characteristics

Published online by Cambridge University Press:  21 February 2011

P.D. Maniar ,
R. Moazzami ,
R.E. Jones ,
A.C. Campbell  and
C.J. Mogab
P.D. Maniar
Affiliation:
MOTOROLA, Semiconductor Products Sector, Advanced Products Research and Development Laboratory, Austin, Texas 78721
R. Moazzami
Affiliation:
MOTOROLA, Semiconductor Products Sector, Advanced Products Research and Development Laboratory, Austin, Texas 78721
R.E. Jones
Affiliation:
MOTOROLA, Semiconductor Products Sector, Advanced Products Research and Development Laboratory, Austin, Texas 78721
A.C. Campbell
Affiliation:
MOTOROLA, Semiconductor Products Sector, Advanced Products Research and Development Laboratory, Austin, Texas 78721
C.J. Mogab
Affiliation:
MOTOROLA, Semiconductor Products Sector, Advanced Products Research and Development Laboratory, Austin, Texas 78721
Get access

Abstract

Integration of a ferroelectric capacitor module in a standard CMOS process subjects the ferroelectric to various ambients during backend processing, some of which can render the ferroelectric essentially non-operational for NVRAM applications. Post-crystallization processing of sol-gel deposited integrated ferroelectric PZT capacitors in the presence of hydrogen-containing, reducing ambients is observed to degrade the nonvolatile polarization. Low-pressure hydrogen anneals at temperatures as low as 200°C substantially degrade the nonvolatile polarization while the DRAM polarization remains roughly constant. Leakage current drops by one order of magnitude and fatigue is accelerated. A ferroelectric capacitor module can be integrated with minimal degradation with careful modifications in the backend processing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 310: Symposium N – Ferroelectric Thin Films III , 1993 , 151
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Moazzami, R., Maniar, P.D., Jones, R.E., Campbell, A.C., and Mogab, C.J., IEDM Technical Digest. 973, (1992).Google Scholar
2. Moazzami, R., Maniar, P.D., Jones, R.E., Campbell, A.C., and Mogab, C.J., 1993 Symposium on VLSI Technology. (1993).Google Scholar
3. , Robertus Wolters, A.M., Ulenaers, M.J.E., U.S. Patent No. 5,122,477 (16 June 1992).Google Scholar
4. Cuppens, R., Larsen, P.K. and Spierings, G.A.C.M., Microelectronic Engineering. 19, 245, (1992).Google Scholar
5. Miller, William D., Evans, J.T., Kinney, W.I. and Shepherd, W.H.. U.S. Patent No. 5,046.043 (3 September 1991).Google Scholar
6. Sanchez, L.E., Naik, I.K., Watanabe, S.H., Leybivich, I.S., Madok, J.H. and Wu, S.Y., ISIF-91. 524, (1991).Google Scholar
7. Brassington, M.P., IEDMS. (November 1990).Google Scholar
8. Moazzami, R., Abt, N., Nissan-Cohen, Y., Shepherd, W.H., Brassington, M.P. and Hu, C., Technical Digest Symposium on VLSI Technology. 61, (1991).Google Scholar
9. Moazzami, R., Hu, C., and Shepherd, W.H., IEEE Transactions Electron Devices. 39, 2044, (1992).Google Scholar