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Impact of a Vicinal Growth Surface on AlAs / GaAs Superlattice Layer Thickness Measurements with Double Crystal X-ray Diffraction
Published online by Cambridge University Press: 26 February 2011
Abstract
Microelectronic devices require deposition of sequences of thin epitaxial layers, with individual layer thicknesses in some instances specified to within tolerances of the order of inter-atomic spacings. Double crystal X-ray diffraction provides measurements of superlattice layer thicknesses to a resolution of the order of inter-atomic spacings, provided diffraction line shifts originating from substrate wafer misalignments are accounted for.
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- Copyright © Materials Research Society 1992