Hostname: page-component-84b7d79bbc-lrf7s Total loading time: 0 Render date: 2024-07-29T22:58:25.459Z Has data issue: false hasContentIssue false
  • English
  • Français

Imaging of Silicon Carrier Dynamics with Near-Field Scanning Optical Microscopy

Published online by Cambridge University Press:  15 February 2011

A. H. La Rosa ,
B. I. Yakobson  and
H. D. Hallen
A. H. La Rosa
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695.
B. I. Yakobson
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695.
H. D. Hallen
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695.
Get access

Abstract

A contactless high spatial resolution technique has been developed to characterize semiconductor materials using the Near-Field Scanning Optical Microscope. The technique can be used to non-invasively measure: surface topography, defect content, and carrier lifetime variations in silicon. The success of the technique relies on the sensitive detection of changes in infrared transmission induced by local generation of free carriers using pulsed visible radiation. Here we extend the application of this technique to characterize silicon on insulator materials. We also include computer simulation results to address the role played by diffusion in the ultimate lateral resolution that can be achieved using this technique.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 406: Symposium L – Diagnostic Techniques for Semiconductor Materials Processing , 1995 , 189
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Betzig, E. and Trautman, J.K., Science 257, 189 (1992).Google Scholar
[2] Pohl, D.W., Denk, W. and Lanz, M., Applied Physics Letters 44, 651 (1984).Google Scholar
[3] LaRosa, A.H., Yakobson, B.I. and Hallen, H.D., submitted (1995).Google Scholar
[4] LaRosa, A.H., Jahncke, C.L. and Hallen, H.D., SPIE Proceedings 2384, 101 (1995).Google Scholar
[5] LaRosa, A., Jahncke, C.L. and Hallen, H.D., Ultramicroscopy 57, 303 (1995).Google Scholar
[6] Yakobson, B.I., Moyer, P.J. and Paesler, M.A., J. Appl. Phys. 73, 7984 (1993).Google Scholar
[7] Toledo-Crow, R., Yang, P. C., Chen, Y. and Vaez-Iravani, M., Applied Physics Letters 60, 2957 (1992).Google Scholar
[8] Betzig, E., Finn, P.L. and Weiner, J.S., Applied Physics Letters 60, 2484 (1992).Google Scholar
[9] LaRosa, A. H., Yakobson, B. I. and Hallen, H. D., Appl. Phys. Lett. 67, (1995).Google Scholar
[10] Hallen, H.D., Yakobson, B.I., LaRosa, A. and Paesler, M.A., SPIE 2535, 34 (1995).Google Scholar