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Identification of Chemical Growth Mechanisms in Amorphous Semiconductors

  • Jeffrey A. Reimer (a1), Michael J. Mccarthy (a2), Karen K. Gleason (a1) and Philip W. Morrison (a1)

Abstract

Experimental and computational results for three classes of experiments are reported. NMR measurements of phosphorus in amorphous hydrogenated silicon indicate that bonding rearrangements in bulk films are possible. Monte Carlo simulations of film growth demonstrate that surface diffusion is the dominant physical phenomenon responsible for the bulk hydrogen content of a-Si:H films. Finally, the gas phase chemistry of silane, as elucidated by our new “diesel” reactor, is considerably more complicated than many authors assume in models for thin films grown from silane.

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