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Hydrothermal Preparation of Ba(Ti,Zr)O3 Thin Films From Ti-Zr Metallic Alloys on Silicon Substrate

  • Chang-Tai Xia (a1), V. M. Fuenzalida (a2) and R. A. Zarate (a2)

Abstract

Ba(Ti,Zr)O3 thin films were grown hydrothermally on silicon substrates coated with sputtered a Ti-34 at.%Zr metallic alloy thin film. To ensure the formation of Ba(Ti,Zr)O3 under the hydrothermal conditions at 150°C, the concentration of the Ba(OH)2 had to be greater than 0.25 M. Preliminary capacitance measurement revealed a dielectric constant of 200 in Ba(Ti,Zr)O3 films of approximately 320 nm. The formation mechanism is discussed.

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Hydrothermal Preparation of Ba(Ti,Zr)O3 Thin Films From Ti-Zr Metallic Alloys on Silicon Substrate

  • Chang-Tai Xia (a1), V. M. Fuenzalida (a2) and R. A. Zarate (a2)

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