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Hydrogen-Plasma Reactive Flushing for a-Si:H P-I-N Solar Cell Fabrication

Published online by Cambridge University Press:  25 February 2011

Y. S. Tsuo ,
Y. Xu ,
Richard S. Crandall ,
H. S. Ullal  and
K. Emery
Y. S. Tsuo
Affiliation:
Solar Energy Research Institute, Golden, Colorado 80401
Y. Xu
Affiliation:
Solar Energy Research Institute, Golden, Colorado 80401
Richard S. Crandall
Affiliation:
Solar Energy Research Institute, Golden, Colorado 80401
H. S. Ullal
Affiliation:
Solar Energy Research Institute, Golden, Colorado 80401
K. Emery
Affiliation:
Solar Energy Research Institute, Golden, Colorado 80401
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Abstract

We have studied the effects of a hydrogen-plasma reactive flush between the pand i-layer depositions in fabricating solar cells of glass/TCO/p(a-SiC:H)-i(a-Si:H)-n(a-Si:H)/metal in a single-chamber, glow-discharge deposition system. Spectral response, photoluminescence, and photovoltaic conversion efficiency measurements show that the hydrogen-plasma reactive flush is effective in reducing the p-i interface recombination of charge carriers and in improving solar cell performance.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 471
Copyright
Copyright © Materials Research Society 1989

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References

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