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Hydrogen Structures in Heavily Hydrogenated Crystalline and Amorphous Silicon

Published online by Cambridge University Press:  10 February 2011

W. B. Jackson ,
A. Franz ,
Y. Chabal ,
M. K. Weldon ,
H.-C. Jin  and
J. R. Abelson
W. B. Jackson
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
A. Franz
Affiliation:
Dept. of Chemical Eng. MIT, Cambridge MA
Y. Chabal
Affiliation:
Lucent Technologies, Murray Hill, NJ
M. K. Weldon
Affiliation:
Lucent Technologies, Murray Hill, NJ
H.-C. Jin
Affiliation:
Univ. of II., Dept. of Mat.Science and Eng., and Coordinated Science Lab, Urbana IL 61801
J. R. Abelson
Affiliation:
Univ. of II., Dept. of Mat.Science and Eng., and Coordinated Science Lab, Urbana IL 61801
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Abstract

The hydrogen binding energy distribution and IR spectra of hydrogen platelets in c-Si have been measured and compared to H in other forms of silicon including hydrogenated polycrystalline and amorphous Si. The binding distribution for platelet containing samples, determined using H evolution, exhibits two peaks: a bulk peak at 1.8–1.9 eV below the transport barrier, and a second possibly surface related peak 1.8–1.9 eV below the surface evolution barrier. The bulk peak grows at 250C and is consistent with calculated energies for platelet structures. The same two evolution peaks are found in hydrogenated polycrystalline Si and amorphous silicon. The IR spectra for heavily hydrogenated c-Si are dominated by the stretching modes at 2076 and 2128 cm-1. Most surprisingly there appears to be a strong mode at 856 cm-1 which is associated with a deformation mode of SiH3. Even more surprising, this SiH3 856 cm-1 mode remains until 550 C indicating that the SiH3 containing structures are rather stable.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 513: Symposium H – Hydrogen in Semiconductors and Metals , 1998 , 381
Copyright
Copyright © Materials Research Society 1998

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