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Hydrogen Passivation of GaAs:C Epitaxial Layers Grown from Metalorganic Sources

  • Michael Stavola (a1), D. M. Kozuch (a1), C. R. Abernathy (a2) and W. S. Hobson (a2)

Abstract

Carbon is readily incorporated into epitaxial GaAs and related alloys grown from metalorganic sources. Hydrogen is also readily incorporated during growth and processing from essentially every possible source including the metalorganics, AsH3, and H2 that are used during growth or in annealing ambients. This hydrogen forms stable neutral complexes with carbon thereby altering the intended p-type doping. In this paper, the properties of the C-H complexes as well as the sources of hydrogen, the stability of passivation, and the concentration of C-H complexes in epitaxial layers will be discussed.

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Hydrogen Passivation of GaAs:C Epitaxial Layers Grown from Metalorganic Sources

  • Michael Stavola (a1), D. M. Kozuch (a1), C. R. Abernathy (a2) and W. S. Hobson (a2)

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