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Hydrogen Passivation of Er and Si Nanocrystallites in Er-doped SiO2 - Increase in Photoluminescence-

  • N. Fukata (a1) (a2), C. Li (a1), H. Uematsu (a1), T. Arai (a1), T. Makimura (a1) and K. Murakami (a1) (a2)...

Abstract

Hydrogen passivation effect on the enhancement of photoluminescence (PL) of Er ions in SiO2 films contained Si nanocrystallites (nc-Si) has been investigated. Er-doped SiO2 films were fabricated by laser ablation of Er-deposited Si substrate in oxygen gas atmosphere. The PL intensity of Er ions and nc-Si were increased by hydrogen gas treatments, while ESR signal intensity of residual defects located at the interfaces between nc-Si and SiO2 was decreased. These results indicate that hydrogen passivation of residual defects is useful for the enhancement of the Er PL.

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Hydrogen Passivation of Er and Si Nanocrystallites in Er-doped SiO2 - Increase in Photoluminescence-

  • N. Fukata (a1) (a2), C. Li (a1), H. Uematsu (a1), T. Arai (a1), T. Makimura (a1) and K. Murakami (a1) (a2)...

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