Hostname: page-component-848d4c4894-tn8tq Total loading time: 0 Render date: 2024-06-30T21:50:00.742Z Has data issue: false hasContentIssue false
  • English
  • Français

Hydrogen Passivation of Be-Acceptors in AiGaAs/GaAs Quantum Well Structures

Published online by Cambridge University Press:  10 February 2011

Q. X. Zhaoa ,
U. Södervall ,
M. Willandera ,
B. O. Fimland ,
D. Crawford ,
E. Selvigb ,
P. O. Holtzc ,
M. Karlsteena  and
E. Sveinbjömssond
Q. X. Zhaoa
Affiliation:
Physical Electronics and Photonics, Department of Microelectronics and Nanoscience, Chalmers University of Technology and Göteborg University, S-412 96 Göteborg, Sweden. (zhao@fy.chalmers.se)
U. Södervall
Affiliation:
Physical Electronics and Photonics, Department of Microelectronics and Nanoscience, Chalmers University of Technology and Göteborg University, S-412 96 Göteborg, Sweden. (zhao@fy.chalmers.se)
M. Willandera
Affiliation:
Physical Electronics and Photonics, Department of Microelectronics and Nanoscience, Chalmers University of Technology and Göteborg University, S-412 96 Göteborg, Sweden. (zhao@fy.chalmers.se)
B. O. Fimland
Affiliation:
Department of Physical Electronics, Norwegian University of Science and Technology, N-7034 Trondheim, Norway.
D. Crawford
Affiliation:
Department of Physical Electronics, Norwegian University of Science and Technology, N-7034 Trondheim, Norway.
E. Selvigb
Affiliation:
Department of Physical Electronics, Norwegian University of Science and Technology, N-7034 Trondheim, Norway.
P. O. Holtzc
Affiliation:
Department of Physics, Linköping University of Technology, S-583 81 Linköping, Sweden
M. Karlsteena
Affiliation:
Physical Electronics and Photonics, Department of Microelectronics and Nanoscience, Chalmers University of Technology and Göteborg University, S-412 96 Göteborg, Sweden. (zhao@fy.chalmers.se)
E. Sveinbjömssond
Affiliation:
Solid State Electronics Laboratory, Department of Microelectronics ED, Chalmers University of Technology, S-412 96 Göteborg, Sweden.
Get access

Abstract

High quality Al0.3Ga0.7As/GaAs quantum wells with centrally doped Be-acceptors were grown by molecular beam epitaxy (MBE). The well width is either 10 nm or 20 nm, and the concentration of Be-acceptors is varied between 5× 1016/cm3 and 2×1018/cm3. The structures were treated systematically by dc H-plasma at different sample temperatures, gas pressures and cooling down procedures. The passivation of Be-acceptors were characterized by photoluminescence spectroscopy and secondary ion mass spectrometry (SIMS). Without causing degradation of the A1GaAs/GaAs interfaces, we have obtained, for the first time, a deactivation of above 80% of the Be-acceptors. The influence of the Be-doping on the bandgap excitons in the QW structures is also investigated in detail. A significant difference is found in comparison with the earlier reports for 150 Å wide quantum wells, in which different samples were used for different doping concentrations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 513: Symposium H – Hydrogen in Semiconductors and Metals , 1998 , 253
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 For example, see “Hydrogen in Crystalline Semiconductors”, ed. by Pearton, S. J., Corbett, J. W. and Stavola, M. (Springer Series in Materials Science 16, 1992 ).Google Scholar
2 Buyanova, I. A., Ferreira, A. C., Holtz, P. O., Monemar, B., Campman, K., Merz, J. L. and Gossard, A. C., Appl. Phys. Lett. 68, 1365 (1996).Google Scholar
3 Zhao, Q. X., Fimland, B. O., Södervall, U., Willander, M. and Selvig, E., Appl. Phys. Lett. 71, 2139 (1997).Google Scholar
4 Ferreira, A. C., Holtz, P. O., Sernelius, B. E., Buyanova, A., Monemar, B., Mauritz, O., Ekenberg, U., Sundaram, M., Campman, K., Metz, J. L. and Gossard, A. C., Phys. Rev. B54, 16989 (1996); Phys. Rev B54, 16994 (1996).Google Scholar