Hostname: page-component-848d4c4894-cjp7w Total loading time: 0 Render date: 2024-06-23T09:15:27.188Z Has data issue: false hasContentIssue false
  • English
  • Français

Hydrogen Passivation Kinetics of Si Nanocrystals in SiO2

Published online by Cambridge University Press:  10 February 2011

Andrew R. Wilkinson  and
Robert G. Elliman
Andrew R. Wilkinson
Affiliation:
Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra, ACT, 0200
Robert G. Elliman
Affiliation:
Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra, ACT, 0200
Get access

Abstract

Hydrogen passivation of non-radiative defects increases the luminescence intensity from silicon nanocrystals. In this study, photoluminescence (PL) and time-resolved PL were used to investigate the chemical kinetics of the hydrogen passivation process. Isochronal and isothermal annealing sequences were used to determine the reaction kinetics for the absorption and desorption of hydrogen, using the generalised consistent simple thermal (GST) model proposed by Stesmans for Pb defects at planar Si/SiO2 interfaces. This included determination of the activation energies and rate constants for the forward and reverse reactions as well as the associated spread in activation energies. The reaction kinetics determined from such measurements were found to be in excellent agreement with those for the passivation of Pb defects at planar Si/SiO2 interfaces, suggesting the nanocrystal emission process is also limited by such defects. These results provide useful model data as well as insight into the processing conditions needed to achieve optimum passivation in H2. As an extension to the work, a preliminary study into passivation by atomic hydrogen was pursued via a post-metallization Al anneal (alneal). A considerable gain in luminescence efficiency was achieved over the previously optimised passivation in H2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 770: Symposium I – Optoelectronics of Group-IV-Based Materials , 2003 , I4.6
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Poindexter, E.H., Semicond. Sci. Technol. 4, (1989) 961.Google Scholar
2. Brower, K.L., Phys. Rev. B 38, (1988) 9657.Google Scholar
3. Brower, K.L., Phys. Rev. B 42, (1990) 3444.Google Scholar
4. Stesmans, A., Solid State Commun. 97, (1996) 255.Google Scholar
5. Stesmans, A., J. Appl. Phys. 88, (2000) 489.Google Scholar
6. Stesmans, A., Phys. Rev. B 61, (2000) 8393.Google Scholar
7. Stesmans, A., J. Appl. Phys. 92, (2002) 1317.Google Scholar
8. Brandt, M.S. and Stutzmann, M., Appl. Phys. Lett. 61, (1992) 2569.Google Scholar
9. Bardeleben, H.J.v., Chamarro, M., Grosman, A., Morazzani, V., Ortega, C., Siejka, J., and Rigo, S., J. Lumin. 57, (1993) 39.Google Scholar
10. López, M., Garrido, B., García, C., Pellegrino, P., Pérez-Rodríguez, A., Morante, J., Bonafos, C., Carrada, M., and Claverie, A., Appl. Phys. Lett. 80, (2002) 1637.Google Scholar
11. Lannoo, M., Delerue, C., and Allan, G., J. Lumin. 70, (1996) 170.Google Scholar
12. Pierret, R.F., Field effect devices. 2nd ed. 1990: Addison-Wesley.Google Scholar
13. Ghandi, S.K., VLSI fabrication principles: silicon and gallium arsenide. 2nd ed. 1994, NY: John Wiley & Sons.Google Scholar
14. Kerr, M.J. and Cuevas, A., Semicond. Sci. Technol. 17, (2002) 35.Google Scholar
15. Pacifici, D., Moreira, E.C., Franzò, G., Martorino, V., and Priolo, F., Phys. Rev. B 65, (2002) 144109.Google Scholar
16. Stathis, J.H., J. Appl. Phys. 77, (1995) 6205.Google Scholar