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Hydrogen Passivation Effects in Heteroepitaxial InSb Grown on GaAs by Lpmocvd

Published online by Cambridge University Press:  22 February 2011

Byueng-Su Yoo ,
Sang-Gi Kim  and
El-Hang Lee
Byueng-Su Yoo
Affiliation:
Electronics and Telecommunications Research Institute P.O. Box 8, Daeduk Science Town, Daejeon, Korea
Sang-Gi Kim
Affiliation:
Electronics and Telecommunications Research Institute P.O. Box 8, Daeduk Science Town, Daejeon, Korea
El-Hang Lee
Affiliation:
Electronics and Telecommunications Research Institute P.O. Box 8, Daeduk Science Town, Daejeon, Korea
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Abstract

The effects of hydrogen plasma exposure upon electron Hall mobilities in InSb heteroepitaxial film grown on GaAs substrate have been investigated. After exposure to a hydrogen plasma at 250°C, the electron Hall mobility is significantly increased at low temperatures and the temperature dependence of the mobility is reduced. For the film with a broad x-ray rocking-curve width, 4 h-hydrogen plasma exposure can give rise to the enhancement of the mobility up to 6 times at low temperature. The mobility for the film with a narrow line width is enhanced around 1.5 times. These enhanced mobilities are nearly restored by 350°C rapid thermal annealing. The enhancement of the mobility due to hydrogenation is attributed to the satisfaction of the dangling bonds generated by the misfit dislocations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 325: Symposium L – Physics and Applications of Defects in Advanced Semiconductors , 1993 , 279
Copyright
Copyright © Materials Research Society 1994

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References

1. Biefeld, R.M., J. Cryst. Growth, 75, 255(1986).Google Scholar
2. Thompson, P.E., Davis, J.L., Waterman, J., Wagner, R.J., Gammon, D., Gaskill, D.K. and Stahlbush, R., J. Appl. Phys. 69, 7166(1991).Google Scholar
3. Biefeld, R.M. and Hebner, G.A., J. Cryst. Growth, 109, 272(1991).Google Scholar
4. lwamura, Y. and Watanabe, N., Jpn. J. Appl. Phys. 31, L68(1992).Google Scholar
5. Pearton, S.J., Corbett, J.W. and Shi, T.S., Appl. Phys. A, 43, 153(1987).Google Scholar
6. Johnson, N.M., Burnham, R.D., Street, R.A. and Thornton, R.L., Phys. Rev. B, 33, 1102(1986).CrossRefGoogle Scholar
7. McKee, M.A., Yoo, B.-S. and Stall, R.A., J. Cryst. Growth, 124, 286(1992).Google Scholar
8. Noreika, A.J., Greggi, J. Jr., Takei, W.J. and Francombe, M.H., J. Vac. Sci. Technol. A, 1, 558(1983).Google Scholar
9. Auleytner, J., X-ray Methods in the Study of Single Crystals (PWN-Polish Scientific Publishers, Warszawa, 1967) p. 152 Google Scholar
10. Yoo, B.-S., McKee, M.A., Kim, S.-G. and Lee, E.-H., Solid State Commun. 88,447 (1993).Google Scholar
11. Pearton, S.J. and Kahn, J.M., Phys. Stat. Sol. A, 78, K65(1983).Google Scholar
12. Zawadzki, W., in Handbook on Semiconductors, Vol. 1, edited by Paul, W. (North-Holland, New York, 1982) p. 713.Google Scholar