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Hydrogen Neutralization of Shallow-Donor Impurities in Single-Crystal Silicon

Published online by Cambridge University Press:  26 February 2011

N. M. Johnson  and
C. Herring
N. M. Johnson
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
C. Herring
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
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Abstract

New data are presented that considerably strengthen the conclusion, reported previously, that hydrogen can passivate shallow donors in silicon by associating with them to form neutral complexes. Effects of inhomogeneity of doping with depth have been eliminated in the new experiments; the observed increase of the effective Hall mobility after hydrogenation requires neutralization of ionizeddonor scattering centers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 277
Copyright
Copyright © Materials Research Society 1988

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References

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