- Cited by 24
Pangal, K. Sturm, J. C. and Wagner, S. 1999. Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon. Applied Physics Letters, Vol. 75, Issue. 14, p. 2091.
Pangal, K. Chen, Y. Sturm, J.C. and Wagner, S. 1999. Integrated Amorphous and Polycrystalline Silicon TFTs with a Single Silicon Layer. MRS Proceedings, Vol. 557, Issue. ,
Rahn, J.T. Lemmi, F. Mei, P. Lu, J.P. Boyce, J.B. Street, R.A. Apte, R.B. Ready, S.E. Schuylenbergh, K.F. van Nylen, P. Ho, J. Fulks, R.T. Lau, R. and Weisfield, R.L. 1999. High Resolution, High Fill Factor A-SI:H Sensor Arrays for Optical Imaging. MRS Proceedings, Vol. 557, Issue. ,
Ming Wu Pangal, K. Sturm, J.C. and Wagner, S. 1999. High temperature polycrystalline silicon thin film transistor on steel substrates. p. 119.
Wu, Ming Pangal, Kiran Sturm, J. C. and Wagner, Sigurd 1999. High electron mobility polycrystalline silicon thin-film transistors on steel foil substrates. Applied Physics Letters, Vol. 75, Issue. 15, p. 2244.
Caputo, D. de Cesare, G. Kellezi, V. and Palma, F. 2000. Amorphous silicon junction field-effect transistor for digital and analog applications. Applied Physics Letters, Vol. 77, Issue. 9, p. 1390.
Caputo, D. Cesare, G. de Nascetti, A. Kellezi, V. and Palma, F. 2000. A Junction Field Effect Transistor Based on Hydrogenated Amorphous Silicon. MRS Proceedings, Vol. 609, Issue. ,
Schropp, R.E.I. Rath, J.K. Stannowski, B. Werf, C.H.M. Van Der Chen, Y. and Wagner, S. 2000. Low Temperature Poly-Si Layers Deposited by Hot Wire CVD Yielding a Mobility of 4.0 cm2V−1s−1 in Top Gate Thin Film Transistors. MRS Proceedings, Vol. 609, Issue. ,
Wu, Ming Chen, Yu Pangal, Kiran Sturm, James C. and Wagner, Sigurd 2000. High-performance polysilicon thin film transistors on steel substrates. Journal of Non-Crystalline Solids, Vol. 266-269, Issue. , p. 1284.
Erickson, Karl and Dalal, Vikram L 2000. Growth of microcrystalline Si and (Si, Ge) on plastic substrates. Journal of Non-Crystalline Solids, Vol. 266-269, Issue. , p. 685.
Boyce, James B. and Mei, Ping 2000. Technology and Applications of Amorphous Silicon. Vol. 37, Issue. , p. 94.
Wu, Ming and Wagner, Sigurd 2000. Thin Film Transistors Made of Polysilicon Crystallized at 950°C on Steel Substrate. MRS Proceedings, Vol. 609, Issue. ,
Golikova, O. A. Kazanin, M. M. Kuznetsov, A. N. and Bogdanova, E. V. 2000. Nanostructured a-Si:H films obtained by silane decomposition in a magnetron chamber. Semiconductors, Vol. 34, Issue. 9, p. 1085.
Mei, P Boyce, J.B Lu, J.P Ho, J and Fulks, R.T 2000. Pulsed laser crystallization and doping for thin film transistors. Journal of Non-Crystalline Solids, Vol. 266-269, Issue. , p. 1252.
Mulato, M. Lemmi, F. Ho, J. Lau, R. Lu, J. P. and Street, R. A. 2001. Two-color amorphous silicon image sensor. Journal of Applied Physics, Vol. 90, Issue. 3, p. 1589.
Lemmi, F. Mulato, M. Ho, J. Lau, R. Lu, J. P. Street, R. A. and Palma, F. 2001. Active matrix of amorphous silicon multijunction color sensors for document imaging. Applied Physics Letters, Vol. 78, Issue. 10, p. 1334.
Wu, Ming and Wagner, Sigurd 2001. Amorphous silicon crystallization and polysilicon thin film transistors on SiO2 passivated steel foil substrates. Applied Surface Science, Vol. 175-176, Issue. , p. 753.
Street, R. A. 2001. Properties and Applications of Amorphous Materials. p. 369.
Pangal, K. Sturm, J.C. and Wagner, S. 2001. Integrated amorphous and polycrystalline silicon thin-film transistors in a single silicon layer. IEEE Transactions on Electron Devices, Vol. 48, Issue. 4, p. 707.
Wu, Ming and Wagner, Sigurd 2002. CMOS polycrystalline silicon circuits on steel substrates. Journal of Non-Crystalline Solids, Vol. 299-302, Issue. , p. 1316.
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Distinct features of amorphous and polycrystalline silicon are attractive for large-area electronics. These features can be utilized in a hybrid structure which consists of both amorphous and polycrystalline silicon materials. For example, an extension of active matrix technology is the integration of peripheral drivers for the improvement of reliability, cost reduction and compactness of the packaging for large-area electronics. This goal can be approached by a combination of amorphous silicon pixel switches and polysilicon drivers. A monolithic fabrication process has been developed based on a simple modification of the amorphous silicon transistor process which uses selective area laser crystallization. This approach allows us to share many of the process steps involved in making both the amorphous and polysilicon devices. Another example of the hybrid device structure is a self-aligned amorphous silicon thin film transistor with polysilicon source and drain contacts. The advantages of the self-aligned transistor are reduction of the parasitic capacitance and scaling down of the device dimension. With a selective laser doping technique, self-aligned and shortchannel amorphous silicon thin film transistors have been demonstrated.
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