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Hrtem Study Of Dislocations In Gesi/Si Heterostructures Grown By VPE

Published online by Cambridge University Press:  15 February 2011

Jijnwu Liang  and
Xueyuan Wan
Jijnwu Liang
Affiliation:
Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083,China
Xueyuan Wan
Affiliation:
Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083,China
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Abstract

GeSi/Si heterostructures grown by atmospheric chemical vapor epitaxy have been studied by cross sectional high resolution transmission electron microscopy (HRTEM). For the first time we have observed an interstitial-type dislocation loop which is located near to a 60° misfit dislocation in the initially prepared GeSi/Si sample. After 30 minutes observation, the interstitial-type dislocation loop disappeared and the 60° dislocation climbed. Moreover, we have observed dissociated 60° dislocations with about 9 nm width of stacking fault existing in silicon substrate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 442: Symposium E – Defects in Electronic Materials II , 1996 , 349
Copyright
Copyright © Materials Research Society 1997

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