Hostname: page-component-77c89778f8-m8s7h Total loading time: 0 Render date: 2024-07-16T12:20:39.754Z Has data issue: false hasContentIssue false
  • English
  • Français

HREm Study of Al-Si Interfaces

Published online by Cambridge University Press:  26 February 2011

Mohammad Shamsuzzoha ,
Pierre A. Deymier  and
David J. Smith
Mohammad Shamsuzzoha
Affiliation:
Department of Materials Science and Engineering, University of Arizona,Tucson, AZ 85721
Pierre A. Deymier
Affiliation:
Department of Materials Science and Engineering, University of Arizona,Tucson, AZ 85721
David J. Smith
Affiliation:
Center for Solid State Science,, Arizona State University, Tempe, AZ 85287
Get access

Abstract

Interfaces between aluminum and silicon in samples prepared by solidification of an Al-Si eutectic liquid have been studied by high-resolution electron microscopy. The Al and Si grains have a common [110] axis with a misorientation between grains of 70.5°, thus aligning the (lll)si plane with the (111)ALplane. In general, theinterfaces have a complex structurewith numerous interfacial dislocations and considerable facetting. The core structurescan be characterized in terms of structural unit models. The nature of the facetting has also been investigated, in particular one facet which lies approximately along the (111)AL, and (l15)si planes and another which lies approximately along the (110)AL and (l14)si planes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 209: Symposium K – Defects in Materials , 1990 , 649
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Dahmen, U., Douin, J., Hetherington, C. J. D. and Westmacott, K. H., Mat.Res. Soc. Symp. Proc. 139, 87 (1989).CrossRefGoogle Scholar
[2] Le Goues, F. K., Krakow, W. and Ho, P., Phil. Mag. A, 53, 833 (1986).CrossRefGoogle Scholar
[3] Kronberg, M. L. and Wilson, F. M., Trans. A.I.M.E., 85, 26 (1964).Google Scholar
[4] Smith, D. A. and Pond, R. C., Intern. Metals Reviews, 205,61 (1976).Google Scholar
[5] Bollman, W., Crystal Defects and Crystalline Interfaces (Springer,Berlin), 1970.Google Scholar
[6] Shamsuzzoha, M. and Hogan, L. M., Phil. Mag. A, 54, 459 (1986).Google Scholar
[7] Shamsuzzoha, M. and Hogan, L. M., J. Cryst. Growth, 76, 429 (1986).Google Scholar