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HREM of Defects in GaAs/Ga1-xInxAs Strained Layer Superlatuices

Published online by Cambridge University Press:  21 February 2011

O. Unal ,
B. K. Laurich  and
T. E. Mitchell
O. Unal
Affiliation:
Center for Materials Science and Electronic Engineering Division, Los Alamos National Laboratory, Los Alamos, NM 87545
B. K. Laurich
Affiliation:
Mechanical and Electronic Engineering Division, Los Alamos National Laboratory, Los Alamos, NM 87545
T. E. Mitchell
Affiliation:
Center for Materials Science and Electronic Engineering Division, Los Alamos National Laboratory, Los Alamos, NM 87545
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Abstract

GaAs/Gal-xInxAs strained layer superlattices with well-widths of 7nm, barrier widths of 14nm and periods of 10 to 30 have been examined by HREM both in plan view and cross section. Strain release occurs mostly by dislocation generation but twins are also observed, especially at the substrate interface. High resolution images of dislocations, twins and interfaces are analyzed to elucidate mechanisms of strain release.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 183: Symposium E – High Resolution Electron Microscopy of Defects in Materials , 1990 , 193
Copyright
Copyright © Materials Research Society 1990

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