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How CVD SI/GE Layer Growth is Controlled by Each one of the Reaction gas Components

  • H. Kühne (a1), G. Kissinger (a1), P. Zaumseil (a1), S. Hinrich (a1) and H. Richter (a1)...

Abstract

Applying the previously derived “Three-Partial-Rates” model, CVD-Si/Ge-thin film growth and composition is described as influenced by the partial pressures of silane, germane, and hydrogen chloride. The effect of hydrogen carrier gas throughput variation is considered, as well as the density reduction of polycrystalline growth defects by the action of hydrogen chloride and hydrogen.

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How CVD SI/GE Layer Growth is Controlled by Each one of the Reaction gas Components

  • H. Kühne (a1), G. Kissinger (a1), P. Zaumseil (a1), S. Hinrich (a1) and H. Richter (a1)...

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