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How CVD SI/GE Layer Growth is Controlled by Each one of the Reaction gas Components

Published online by Cambridge University Press:  25 February 2011

H. Kühne ,
G. Kissinger ,
P. Zaumseil ,
S. Hinrich  and
H. Richter
H. Kühne
Affiliation:
Institute of Semiconductor Physics, 0-1200 Frankfurt (Oder), Germany
G. Kissinger
Affiliation:
Institute of Semiconductor Physics, 0-1200 Frankfurt (Oder), Germany
P. Zaumseil
Affiliation:
Institute of Semiconductor Physics, 0-1200 Frankfurt (Oder), Germany
S. Hinrich
Affiliation:
Institute of Semiconductor Physics, 0-1200 Frankfurt (Oder), Germany
H. Richter
Affiliation:
Institute of Semiconductor Physics, 0-1200 Frankfurt (Oder), Germany
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Abstract

Applying the previously derived “Three-Partial-Rates” model, CVD-Si/Ge-thin film growth and composition is described as influenced by the partial pressures of silane, germane, and hydrogen chloride. The effect of hydrogen carrier gas throughput variation is considered, as well as the density reduction of polycrystalline growth defects by the action of hydrogen chloride and hydrogen.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 280: Symposium B – Evolution of Surface and Thin Film Microstructure , 1992 , 183
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

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