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Hot Electron Transistors Using Si/CoSi2

  • A. F. J. Levi (a1), R. T. Tung (a1), J. L. Batstone (a1) and M. Anzlowar (a1)

Abstract

We have explored the possibility of fabricating a metal base transistor in the Si/CoSi2 material system. Utilizing recent advances in the growth of thin, pinhole free, CoSi2 layers on Si(111) we have measured the transistor characteristics of a Si/CoSi2/Si structure. The observed low common emitter current gain is attributed to an absence of current carrying states in the CoSi2 transistor base.

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