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Homoepitaxial Growth of Vertical Si Nanowires on Si(100) Substrate using Anodic Aluminum Oxide Template

Published online by Cambridge University Press:  01 February 2011

Tomohiro Shimizu ,
Tian Xie ,
Volker Schmidt ,
Jo Nishikawa ,
Shoso Shingubara ,
Stephan Senz  and
Ulrich Goesele
Tomohiro Shimizu
Affiliation:
shimizu@mpi-halle.de, Max Planck Institute of Microstructure Physics, Experimental Department II, Weinberg 2, Halle, 06120, Germany, +49 - 345 - 5582 672
Tian Xie
Affiliation:
Max Planck Institute of Microstructure Physics, Halle, 06120, Germany
Volker Schmidt
Affiliation:
vschmidt@mpi-halle.de, Max Planck Institute of Microstructure Physics, Halle, 06120, Germany
Jo Nishikawa
Affiliation:
sa6m104@edu.kansai-u.ac.jp, Kansai University, Graduate School of Engineering, Osaka, 564-8680, Japan
Shoso Shingubara
Affiliation:
shingu@ipcku.kansai-u.ac.jp, Kansai University, Graduate School of Engineering, Osaka, 564-8680, Japan
Stephan Senz
Affiliation:
senz@mpi-halle.de, Max Planck Institute of Microstructure Physics, Halle, 06120, Germany
Ulrich Goesele
Affiliation:
goesele@mpi-halle.mpg.de, Max Planck Institute of Microstructure Physics, Halle, 06120, Germany
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Abstract

Homo-epitaxial growth of Si nanowires on Si (100) substrate was accomplished using a combination of anodic aluminum oxide (AAO) template and Vapor-Liquid-Solid (VLS) growth. We prepared two types of AAO template for epitaxial growth of Si nanowires.

We observed vertically grown epitaxial Si (100) nanowires in the AAO template. In addition, after leaving filled pores, Si nanowires changed their growth direction from [100] to <111>. This result shows that the walls of the pores forced the growth direction of Si nanowires parallel to the direction of the pores, and after complete filling, the growth direction changes to that of the Si nanowires on a bare Si substrate.

Keywords

Siepitaxychemical vapor deposition (CVD) (deposition)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1058: Symposium JJ – Nanowires–Novel Assembly Concepts and Device Integration , 2007 , 1058-JJ03-01
Copyright
Copyright © Materials Research Society 2008

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References

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