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Homoepitaxial 4H-SiC films grown by microwave plasma chemical vapor deposition

  • Mitsuo Okamoto (a1) (a2), Ryoji Kosugi (a1) (a2), Shinichi Nakashima (a1) (a2) (a3), Kenji Fukuda (a1) (a2) and Kazuo Arai (a1) (a2)...

Abstract

Homoepitaxial 4H-SiC film growth has been carried out at temperatures as low as 1000°C on 4H-SiC of Si-face and C-face by microwave plasma chemical vapor deposition method. The extent of step-bunching of those films grown on C-face was low in comparison with that on Si-face, although large and irregular shaped step-bunching was occurred in both films grown on Si-face and C-face. For the first step to application for the electrical devices, the electrical properties of the μPCVD grown films was characterized by fabricating simple pn-junction structure. The obtained SiC films indicated n-type conductivity and the amount of background donor impurities of the films grown on C-face substrates were lower by one order than that on Si-face.

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Homoepitaxial 4H-SiC films grown by microwave plasma chemical vapor deposition

  • Mitsuo Okamoto (a1) (a2), Ryoji Kosugi (a1) (a2), Shinichi Nakashima (a1) (a2) (a3), Kenji Fukuda (a1) (a2) and Kazuo Arai (a1) (a2)...

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