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A Hollow-Cathode Transient Plasma Process for Thin Film Growth

Published online by Cambridge University Press:  10 February 2011

S. Witanachchi
Affiliation:
Laboratory for Advanced Materials Science and Technology (LAMSAT), Department of Physics, University of South Florida, Tampa, FL 33620
P. Mahawela
Affiliation:
Laboratory for Advanced Materials Science and Technology (LAMSAT), Department of Physics, University of South Florida, Tampa, FL 33620
P. Mukherjee
Affiliation:
Laboratory for Advanced Materials Science and Technology (LAMSAT), Department of Physics, University of South Florida, Tampa, FL 33620
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Abstract

We have developed a vapor deposition method that produces a highly ionized transient plasma plume of metallic species in the presence of a low-pressure inert or reactive gas glow discharge. In this process, a transient electrical discharge is formed in a hollow-cathode by a pulse-forming network (PFN) which is triggered by a pulsed CO2 laser. Current pulses with peak currents of 100 kA and pulse widths of about 20 ms have been produced by the PFN. The effect of the PFN power input and the ambient gas pressure on the evaporated material yield is presented. These experiments also showed a higher evaporation rate of carbon in a nitrogen ambient than in an Ar ambient. Carbon films, with rates of deposition exceeding 18A per pulse that are uniform over a large area, have been deposited. The ionic content of the plasma, spatial distribution of ions, and plume expansion dynamics have been investigated by time-of-flight ion probe measurements and optical emission spectroscopy and are presented.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

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References

1 Aisenberg, S., and Chabot, R., J. Appl. Phys. 42, 2953 (1971).10.1063/1.1660654Google Scholar
2 Fair, R. B., J. Appl. Phys. 42, 3176 (1971).10.1063/1.1660703Google Scholar
3 Mattox, D. M., Ion Plating Technology, in “Deposition Technology for Films and Coatings”, ed. Bunshah, R. F., Noyes Publications (1982)Google Scholar
4 Pranevicius, L., Thin Solid Films 63, 77 (1979).10.1016/0040-6090(79)90103-2Google Scholar
5 Cuomo, J. J., Harper, J. M. E., Guamieri, C. R., Lee, D. S., Attanasio, L. J., Angilello, J., Wu, C. R. and Hammond, R. H., J. Vacuum Sci. Technol. 20, 349 (1982).10.1116/1.571462Google Scholar
6 Hirvonen, J. K., Mater. Sci. Rep. 6, 215 (1991).10.1016/0920-2307(91)90008-BGoogle Scholar
7 Hubler, G. K., in “Pulsed Laser Deposition of Thin Films”, p 327, ed. Chrisey, D. B. and Hubler, G. K., John Wiley & Sons, Inc., New York (1994)Google Scholar
8 Al-Jumaily, G. A. and Edlou, S. M., Thin Solid Films 209, 223 (1992).10.1016/0040-6090(92)90679-6Google Scholar
9 Chhowalla, M., Alexandrou, I., Kiely, C., Amarathunga, G. A. J., Aharonov, R., and Fontana, R. F., Thin Solid Films 290–291, 103 (1996).10.1016/S0040-6090(96)09067-0Google Scholar
10 Townsend, P. D., Kelly, J. C., and Hartley, N. E. W., “Ion Implantation, Sputtering and Their ApplicationsAcademic Press, New York (1976)Google Scholar
11 Vasin, A. I., Dorodnov, A. M., and Petrosove, V. A., Soy. Phys. Tech. Phys. Vol. 5(12), 634 (1979)Google Scholar
12 Brown, I. G., and Oks, E. M., IEEE Trans. Plasma Sci., 25(6), 1222 (1997)10.1109/27.650897Google Scholar
13 Witanachchi, S., Ahmed, K., Sakthivel, P. and Mukherjee, P., Appl. Phys. Lett., 66, 1469, 1995.10.1063/1.113657Google Scholar
14 Witanachchi, S. and Mukherjee, P., J. Vac. Sci. Technol., A13, 11711174, 1995.10.1116/1.579856Google Scholar
15 Saenger, K. L. in “Pulsed Laser Deposition of Thin Films”, p 199, ed. Chrisey, D. B. and Hubler, G. K., John Wiley & Sons, Inc., New York (1994)Google Scholar