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High-Throughput Screening of Flux Materials for Single Crystal Growth by Combinatorial Pulsed Laser Deposition

Published online by Cambridge University Press:  01 February 2011

R. Takahashi ,
T. Tanigawa ,
Y. Yamamoto ,
Y. Yonezawa ,
Y. Matsumoto  and
H. Koinuma
R. Takahashi
Affiliation:
Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226–8503, Japan
T. Tanigawa
Affiliation:
Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226–8503, Japan
Y. Yamamoto
Affiliation:
National Institute of Materials Science, 1–1 Namiki, Tsukuba, Ibaragi, 305–0044, Japan
Y. Yonezawa
Affiliation:
Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226–8503, Japan Fuji Electric Corporate Research and Development, Ltd, 2–2–1, Nagasaka, Yokohama-city 240–0194, Japan
Y. Matsumoto
Affiliation:
Frontier Collaborative Research Center, Tokyo Institute of Technology, Yokohama 226–8503, Japan
H. Koinuma
Affiliation:
Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226–8503, Japan National Institute of Materials Science, 1–1 Namiki, Tsukuba, Ibaragi, 305–0044, Japan CREST, Japan Science and Technology Corporation, Japan
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Abstract

We propose a new concept and method for high throughput screening of flux materials used in the bulk single crystal growth. The concept of our tri-phase epitaxy has been generalized as the flux-mediated epitaxy with the aid of quick optimization of flux materials in the combinatorial thin-film technology. Here, we report on the successful discovery of a new flux composition of Bi-Ti-Cu-O for the growth of high-quality Bi4Ti3O12 bulk crystal and thin film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 804: Symposium JJ – Combinatorial and Artificial Intelligence Methods in Materials Science II , 2003 , JJ9.20
Copyright
Copyright © Materials Research Society 2004

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References

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