Skip to main content Accessibility help
×
Home

High-Resolution Spectroscopy of Point Defects in Silicon

  • H.G. Grimmeiss (a1), M. Kleverman (a1) and J. Olajos (a1)

Abstract

The paper briefly outlines recent developments in high resolution spectroscopy of point defects in silicon. One of the methods, namely photothermal ionization spectroscopy (PTIS) is discussed in detail. Impurities induced by selenium and several transition metals are used as examples m order to illustrate the powerful scope of both transmission and PTIS measurements. These measurements are capable of providing unique information on the electronic properties of point defects, even when the defects exhibit complex excitation spectra.

Copyright

References

Hide All
1 See for example Bube, R.H., Photoconductivity of Solids, John Wiley & Sons, Inc., New York, 1960
2 See for example Hoogenstraaten, W., Ph.D Thesis, University of Amsterdam (1958)
3 Björklund, G. and Grimmeiss, H.G., Phys. Status Solidi 42, K1 (1970)
4 Sah, C.T., Forbes, L., Rosier, L.L. and Tasch, A.F., Solid State Electron. 13, 759 (1970)
5 Lang, D.V., J. Appl. Phys. 45,3023 (1974)
6 See for example Ludwig, G.W., Phys. Rev. 137, A1520 (1965)
7 Grimmeiss, H.G., Janzén, E., Ennen, H., Schirmer, O., Schneider, J., Wörner, R., Holm, C., Sirtl, E. and Wagner, P., Phys. Rev. B24,4571 (1981)
8 Grimmeiss, H.G., Kleverman, M. and Olajos, J., Mater. Sci. Forum 38–41,341 (1989)
9 Lifshits, T.M., Likhrman, N.P. and Sidorov, V.I., Fiz. Tekh. Poluprov. 2,782 (1968)
10 Kahn, J.M., PhD Thesis, University of California at Berkeley (1986)
11 Queisser, H.J., Festkörperprobleme XI 45 (1971)
12 Kleverman, M., Fornell, J.O., Olajos, J., Grimmeiss, H.G. and Lindström, J.L., Phys. Rev. B37,10199 (1988)
13 Watkins, G.D. and Corbett, J.W., Phys. Rev. 121, 1001 (1961)
14 Corbett, J.W., Watkins, G.D., Chrenko, R.M. and Mc Donald, R.S., Phys. Rev. 121, 1015(1961)
15 Wagner, J., Thonke, K. and Sauer, R., Phys. Rev. B29 7051 (1984)
16 Foy, C.P., J. Phys. C 15,2059 (1982)
17 Thonke, K., Hangleiter, A., Wagner, J. and Saver, R., J. Phys. C 18, L 795 (1985)
18 Janzén, E., Stedman, R., Grossmann, G. and Grimmeiss, H.G., Phys. Rev. 28,1907 (1984)
19 Fornell, J.O. and Grimmeiss, H.G., to be published
20 Engström, O. and Alm, A., Solid-State Electron. 21, 1571 (1978)
21 Olajos, J., Kleverman, M., Bech Nielsen, B. and Grimmeiss, H.G., Inst. Phys. Conf. Ser. No 95, p. 101(1989)
22 Baber, N., Grimmeiss, H.G., Kleverman, M., Omling, P. and Zafar, N., J. Appl. Phys. 62,2855 (1987)
23 Bergman, K., Grossmann, G., Grimmeiss, H.G. and Stavola, M., Phys. Rev. Lett. 56, 2827(1986)
24 Olajos, J., Bech Nielsen, B., Kleverman, M., Omling, P., Emanuelsson, P. and Grimmeiss, H.G., Appl. Phys. Lettl 53,2507(1988)
25 Bever, T., Emanuelsson, P., Kleverman, M. and Grimmeiss, H.G., J. Appl. Phys. (?)
26 Ludwig, G.W. and Woodbury, H.H., Solid State Phys. 13,223 (1962)
27 Czaputa, R., Feichtinger, H. and Oswald, J., Solid State Commun. 47, 223 (1983)
28 Kimerling, L.C., Benton, J.L. and Rubin, J.J. in: Defects and Radiation Effects in Semiconductors 1980, Inst. of Physics Conf. Ser. 59,217 (1981)
29 Wagner, J. and Sauer, R., Phys. Rev. B26,6,3502
30 Kleverman, M., Olajos, J. and Grimmeiss, H.G., Phys. Rev. B37,2613 (1988) and references therein.
31 Olajos, J., Kleverman, M. and Grimmeiss, H.G., Phys. Rev. B40,6196 (1989)
32 Pugnet, M., Barbolla, J., Brabant, J.C., Saint-Yves, F. and Brousseau, M., Physica Status Solidi A 35,533 (1976)

Related content

Powered by UNSILO

High-Resolution Spectroscopy of Point Defects in Silicon

  • H.G. Grimmeiss (a1), M. Kleverman (a1) and J. Olajos (a1)

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed.