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High-Resolution Spectroscopy of Point Defects in Silicon

Published online by Cambridge University Press:  25 February 2011

H.G. Grimmeiss ,
M. Kleverman  and
J. Olajos
H.G. Grimmeiss
Affiliation:
University of Lund, Dept. of Solid State Physics, Box 118, S-22l 00 Lund, Sweden
M. Kleverman
Affiliation:
University of Lund, Dept. of Solid State Physics, Box 118, S-22l 00 Lund, Sweden
J. Olajos
Affiliation:
University of Lund, Dept. of Solid State Physics, Box 118, S-22l 00 Lund, Sweden
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Abstract

The paper briefly outlines recent developments in high resolution spectroscopy of point defects in silicon. One of the methods, namely photothermal ionization spectroscopy (PTIS) is discussed in detail. Impurities induced by selenium and several transition metals are used as examples m order to illustrate the powerful scope of both transmission and PTIS measurements. These measurements are capable of providing unique information on the electronic properties of point defects, even when the defects exhibit complex excitation spectra.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 3
Copyright
Copyright © Materials Research Society 1990

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