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High-Resolution Electron Microscopy of Planar Defects in Ain.

  • Stuart Mckernan (a1), M. Grant Norton (a1) and C. Barry Carter (a1)

Abstract

The defects which occur in polycrystalline aluminum nitride are very detrimental to the beneficial physical and electrical properties. 'Dome-like' or 'D' defects, consisting of a flat basal fault joined to a curved planar fault, are examined by high-resolution electron microscopy. The basal segments are shown to contain a thin ∼5Å layer of a second phase and are associated with a stacking-fault and an antiphase boundary. A structural model is proposed for the defect which incorporates a layer of alumina at the basal segment of the 'D' defect. The formation of thisdefect is discussed.

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High-Resolution Electron Microscopy of Planar Defects in Ain.

  • Stuart Mckernan (a1), M. Grant Norton (a1) and C. Barry Carter (a1)

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