Hostname: page-component-7479d7b7d-qs9v7 Total loading time: 0 Render date: 2024-07-12T11:15:15.991Z Has data issue: false hasContentIssue false
  • English
  • Français

High-Resolution Electron Microscopy of Planar Defects in Ain.

Published online by Cambridge University Press:  21 February 2011

Stuart Mckernan ,
M. Grant Norton  and
C. Barry Carter
Stuart Mckernan
Affiliation:
Department of Materials Science and Engineering, Bard Hall, Cornell University, Ithaca, NY 14853
M. Grant Norton
Affiliation:
Department of Materials Science and Engineering, Bard Hall, Cornell University, Ithaca, NY 14853
C. Barry Carter
Affiliation:
Department of Materials Science and Engineering, Bard Hall, Cornell University, Ithaca, NY 14853
Get access

Abstract

The defects which occur in polycrystalline aluminum nitride are very detrimental to the beneficial physical and electrical properties. 'Dome-like' or 'D' defects, consisting of a flat basal fault joined to a curved planar fault, are examined by high-resolution electron microscopy. The basal segments are shown to contain a thin ∼5Å layer of a second phase and are associated with a stacking-fault and an antiphase boundary. A structural model is proposed for the defect which incorporates a layer of alumina at the basal segment of the 'D' defect. The formation of thisdefect is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 183: Symposium E – High Resolution Electron Microscopy of Defects in Materials , 1990 , 267
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Hagege, S., Ishida, Y., and Tanaka, S., J. de Physique, 49, C5–189 (1988)Google Scholar
2. McKernan, S. and Carter, C. B., Proc. 47th EMSA meeting, 432 (1989) and 1989 MRS Symposium on Advances in Electronic Packaging Materials (in Press)Google Scholar
3. Denanot, M. F. and Rabier, J., J. Mat. Sci. 24, 1594 (1989)Google Scholar
4. Westwood, A. D. and M. R. Notis Submitted to American Ceramics Society.Google Scholar
5. Youngman, R. A. Harris, J. H., Labun, P. A., Graham, R. J., and Weiss, J. K. 1989 MRS Symposium on Advances in Electronic Packaging Materials (in Press)Google Scholar
6. Ishida, Y., Hagege, S., Ichinose, H. and Takahashi, Y., J. Elect. Microsc. Tech., 12, 244, (1989)10.1002/jemt.1060120307Google Scholar
7. TEMPAS multislice program; Kilaas, R., Total Resolution, Berkeley, CA 94707Google Scholar