Skip to main content Accessibility help
×
Home

High-Resolution Core Level Studies of Interdiffusion and Reaction at Metal-Semiconductor Interfaces

  • M. Del Giudice (a1), J. J. Joyce (a1), F. Boscherini (a1), C. Capasso (a1) and J. H. Weaver (a1)...

Abstract

We present a detailed microscopic investigation of interactions and reactions occurring at refractory-metal silicon interfaces at room temperature. High resolution core level photoemission results for Ti coverages in the range 0.2–16 monolayers on cleaved Si(111)2×1 show that three new distinct Si environments are created by semiconductor surface disruption. In agreement with heats of formation or electronegativity differences, all the chemical shifts are at lower binding energy. Each of them represents a different metal-Si coordination or configuration. Analogous results for Sc overlayers indicate that at least two reacted species are present. For both Ti and Sc, the reaction is started at submonolayer coverages. Analysis of the Si 2p intensity attenuation curves shows an evolution characterized by the sequential growth of the different species. Indeed, each species grows, reaches saturation, and is then attenuated. This is associated with the competition between diffusion and reaction at the interface.

Copyright

References

Hide All
1. Weaver, J.H., “Synchrotron Radiation Studies of Surfaces and Interfaces,” chapter 2 in Analytical Techniques for Thin Films, edited by Tu, K.N. and Rosenberg, R. (Academic Press) in press.
2. Calandra, C., Bisi, O., and Ottaviani, G., Surf. Sci. Rep. 4, 271 (1984).
3. Le Lay, G., Surf. Sci. 132, 169 (1983).
4. Brillson, L.J., Surf. Sci. Rep. 2, 123 (1982).
5. Zunger, A., Phys. Rev. B 24, 4372 (1981);
Daniels, R.R., Katnani, A.D., Margaritondo, G. and Zunger, A., Phys. Rev. Lett. 47, 875 (1981).
6. del Giudice, M., Joyce, J.J., Ruckman, M.W., and Weaver, J.H., Phys. Rev. B 32, 5149 (1985).
7. Ludeke, R., Surf. Sci. 132, 143 (1983).
8. Butera, R.A., del Giudice, M., and Weaver, J.H., Phys. Rev. B 33, 5435 (1986).
9. del Giudice, M., Joyce, J.J., Ruckman, M.W., and Weaver, J.H., Phys. Rev. B 32, 5149 (1985);
Purteil, R., Clabes, J.G., Rubloff, G.W., Ho, P.S., Reihl, B., and Himpsel, F.J., J. Vac. Sci. Technol. 21, 615 (1982).
10. del Giudice, M., Joyce, J.J., Ruckman, M.W., and Weaver, J.H., Phys. Rev. B (submitted).
11. del Giudice, M., Butera, R.A., Joyce, J.J., Ruckman, M.W., and Weaver, J.H., J. Vac. Sci. Technol. A4, 879(1986).
14. Walser, R.M. and Bene, R.W., Appl. Phys. Lett. 28, 624 (1976).

High-Resolution Core Level Studies of Interdiffusion and Reaction at Metal-Semiconductor Interfaces

  • M. Del Giudice (a1), J. J. Joyce (a1), F. Boscherini (a1), C. Capasso (a1) and J. H. Weaver (a1)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed