Hostname: page-component-76fb5796d-22dnz Total loading time: 0 Render date: 2024-04-26T18:03:35.424Z Has data issue: false hasContentIssue false
  • English
  • Français

High-Quality a-Si-Based Alloys : a-SiGe Films Fabricated in a Super Chamber and Superlattice Structure a-Si Films Prepared by a Photo-CVD Method

Published online by Cambridge University Press:  26 February 2011

Shinya Tsuda ,
Hisao Haku ,
Hisaki Tarui ,
Takao Matsuyama ,
Katsunobu Sayama ,
Yukio Nakashima ,
Shoichi Nakano ,
Michitoshi Ohnishi  and
Yukinori Kuwano
Shinya Tsuda
Affiliation:
SANYO Electric Co., Ltd. 1-18-13, Hashiridani, Hirakata City, Osaka, Japan
Hisao Haku
Affiliation:
SANYO Electric Co., Ltd. 1-18-13, Hashiridani, Hirakata City, Osaka, Japan
Hisaki Tarui
Affiliation:
SANYO Electric Co., Ltd. 1-18-13, Hashiridani, Hirakata City, Osaka, Japan
Takao Matsuyama
Affiliation:
SANYO Electric Co., Ltd. 1-18-13, Hashiridani, Hirakata City, Osaka, Japan
Katsunobu Sayama
Affiliation:
SANYO Electric Co., Ltd. 1-18-13, Hashiridani, Hirakata City, Osaka, Japan
Yukio Nakashima
Affiliation:
SANYO Electric Co., Ltd. 1-18-13, Hashiridani, Hirakata City, Osaka, Japan
Shoichi Nakano
Affiliation:
SANYO Electric Co., Ltd. 1-18-13, Hashiridani, Hirakata City, Osaka, Japan
Michitoshi Ohnishi
Affiliation:
Research Center, Applied Research Center, 1-18-13, Hashiridani, Hirakata City, Osaka, Japan
Yukinori Kuwano
Affiliation:
SANYO Electric Co., Ltd. 1-18-13, Hashiridani, Hirakata City, Osaka, Japan
Get access

Abstract

In order to improve the conversion efficiency of a-Si solar cells, high-quality a-Si based alloys of both narrow handgap and wide bandgap were studied.

Concerning the narrow bandgap material, we found a particular dependence of film qualities on substrate temperature. In addition, high-quality a-SiGe:H films were obtained by using a super chamber (separated ultra-high vacuum reaction chamber).

As for the high-quality wide bandgap material, a-Si/a-SiC superlattice structure films fabricated by a photo-CVD method were studied for the first time. From the analysis of their properties, we found that the superlattice structure p-layer was an active layer for photovoltaic effect. A conversion efficiency of 11.2% has been obtained for a pin a-Si solar cell whose player was of the superlattice structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 95: Symposium E – Amorphous Silicon Semiconductors--Pure and Hydrogenated , 1987 , 311
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1) Nakano, S. et al.: MRS symposia proceedings Vol.70 (1986) 551 Google Scholar
2) Tsuda, S. et al.: Jpn. J. Appl. Phys. 21 (1982) Suppl. 21–2, 251Google Scholar
3) Matsuda, A. et al.: Jpn. J. Appl. Phys. 25 (1986) L54Google Scholar
4) Tsuda, S. et al.: Proc. 18th IEEE Photovol. Spec. Conf. (1985) 1295Google Scholar
5) Tsuda, S. et al.: J. Non-Cryst. Solids 77&78 (1985) 845 Google Scholar
6) Tsuda, S. et al.: Jpn. J. Appl. Phys. 26 (1987) 28 Google Scholar