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High-Quality a-Si-Based Alloys : a-SiGe Films Fabricated in a Super Chamber and Superlattice Structure a-Si Films Prepared by a Photo-CVD Method

  • Shinya Tsuda (a1), Hisao Haku (a1), Hisaki Tarui (a1), Takao Matsuyama (a1), Katsunobu Sayama (a1), Yukio Nakashima (a1), Shoichi Nakano (a1), Michitoshi Ohnishi (a2) and Yukinori Kuwano (a1)...

Abstract

In order to improve the conversion efficiency of a-Si solar cells, high-quality a-Si based alloys of both narrow handgap and wide bandgap were studied.

Concerning the narrow bandgap material, we found a particular dependence of film qualities on substrate temperature. In addition, high-quality a-SiGe:H films were obtained by using a super chamber (separated ultra-high vacuum reaction chamber).

As for the high-quality wide bandgap material, a-Si/a-SiC superlattice structure films fabricated by a photo-CVD method were studied for the first time. From the analysis of their properties, we found that the superlattice structure p-layer was an active layer for photovoltaic effect. A conversion efficiency of 11.2% has been obtained for a pin a-Si solar cell whose player was of the superlattice structure.

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1) Nakano, S. et al.: MRS symposia proceedings Vol.70 (1986) 551
2) Tsuda, S. et al.: Jpn. J. Appl. Phys. 21 (1982) Suppl. 21–2, 251
3) Matsuda, A. et al.: Jpn. J. Appl. Phys. 25 (1986) L54
4) Tsuda, S. et al.: Proc. 18th IEEE Photovol. Spec. Conf. (1985) 1295
5) Tsuda, S. et al.: J. Non-Cryst. Solids 77&78 (1985) 845
6) Tsuda, S. et al.: Jpn. J. Appl. Phys. 26 (1987) 28

High-Quality a-Si-Based Alloys : a-SiGe Films Fabricated in a Super Chamber and Superlattice Structure a-Si Films Prepared by a Photo-CVD Method

  • Shinya Tsuda (a1), Hisao Haku (a1), Hisaki Tarui (a1), Takao Matsuyama (a1), Katsunobu Sayama (a1), Yukio Nakashima (a1), Shoichi Nakano (a1), Michitoshi Ohnishi (a2) and Yukinori Kuwano (a1)...

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