Hostname: page-component-848d4c4894-xfwgj Total loading time: 0 Render date: 2024-07-02T14:14:40.667Z Has data issue: false hasContentIssue false
  • English
  • Français

High-Quality Amorphous Silicon Carbide Prepared by a New Fabrication Method for a Window P-Layer of Solar Cells

Published online by Cambridge University Press:  25 February 2011

K. Ninomiya ,
H. Haku ,
H. Tarui ,
N. Nakamura ,
M. Tanaka ,
K. Wakisaka ,
S. Tsuda ,
H. Nishiwaki ,
S. Nakano  and
Y. Kuwano
K. Ninomiya
Affiliation:
Sanyo Electric Co., Ltd., Functional Materials Research Center 1–18–13, Hashiridani, Hirakata, Osaka, 573, Japan
H. Haku
Affiliation:
Sanyo Electric Co., Ltd., Functional Materials Research Center 1–18–13, Hashiridani, Hirakata, Osaka, 573, Japan
H. Tarui
Affiliation:
Sanyo Electric Co., Ltd., Functional Materials Research Center 1–18–13, Hashiridani, Hirakata, Osaka, 573, Japan
N. Nakamura
Affiliation:
Sanyo Electric Co., Ltd., Functional Materials Research Center 1–18–13, Hashiridani, Hirakata, Osaka, 573, Japan
M. Tanaka
Affiliation:
Sanyo Electric Co., Ltd., Functional Materials Research Center 1–18–13, Hashiridani, Hirakata, Osaka, 573, Japan
K. Wakisaka
Affiliation:
Sanyo Electric Co., Ltd., Functional Materials Research Center 1–18–13, Hashiridani, Hirakata, Osaka, 573, Japan
S. Tsuda
Affiliation:
Sanyo Electric Co., Ltd., Functional Materials Research Center 1–18–13, Hashiridani, Hirakata, Osaka, 573, Japan
H. Nishiwaki
Affiliation:
Sanyo Electric Co., Ltd., Functional Materials Research Center 1–18–13, Hashiridani, Hirakata, Osaka, 573, Japan
S. Nakano
Affiliation:
Sanyo Electric Co., Ltd., Functional Materials Research Center 1–18–13, Hashiridani, Hirakata, Osaka, 573, Japan
Y. Kuwano
Affiliation:
Sanyo Electric Co., Ltd., Functional Materials Research Center 1–18–13, Hashiridani, Hirakata, Osaka, 573, Japan
Get access

Abstract

A total area conversion efficiency of 11.1% has been achieved for a 1Ocm×1Ocm integrated-type single-junction a-Si solar cell submodule using a high-quality wide-bandgap p-layer doped with B(CH3)3 and other advanced techniques. This is the highest conversion efficiency ever reported for an a-Si solar cell with an area of 100cm2. As for a multi-junction solar cell, 12.1% was obtained for a 1cm2 cell with a high-quality wide-bandgap a-Si i-layer. The layer was fabricated by a hydrogen dilution method at a low substrate temperature for a front active layer of an a-Si/a-Si/a-SiGe stacked solar cell.

For further improvement in conversion efficiency, a wider-bandgap a-SiC was developed using a novel plasma CVD method, called the CPM (Controlled Plasma Magnetron) method. From XPS and IR measurements, the resultant films were found to have high Si-C bond density and low Si-H bond density, p-type a-SiC was fabricated using the post-doping technique, and dark conductivity more than 10-5(Q. cm)-1 was obtained (Eopt3 ≥ 2eV; Eopt2 2.2eV), whereas that of conventional p-type a-SiC is less than 10-6(Ω·cm)-1. These properties are very promising for application to the p-layers of advanced a-Si solar cells.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 242: Symposium G – Wide Band-Gap Semiconductors , 1992 , 663
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Tawada, Y., Kondo, M., Okamoto, H. and Hamakawa, Y., J. Appl. Phys., 52, 5273 (1982)Google Scholar
[2] Tarui, H., Matsuyama, T., Nakamura, N., Tsuda, S., Nakano, S. and Kuwano, Y., Jpn. J. Appl. Phys., 28, 2436 (1989)Google Scholar
[3] Matsuda, A. and Tanaka, K., J. Non-Cryst. Solids, 97&98, 1367 (1987)Google Scholar
[4] Hishikawa, Y., Tsuda, S., Nakano, S. and Kuwano, Y., J. Appl. Phys., 69, 508(1991)Google Scholar
[5] Ohnishi, M., Tanaka, M., Ninoraiya, K., Nakamura, N., Tsuda, S., Nakano, S. and Kuwano, Y., Jpn. J. Appl. Phys., 27, 40 (1988)Google Scholar
[6] Hishikawa, Y., Nakamura, N., Tsuda, S., Nakano, S. and Kuwano, Y., 30, 1008(1991)Google Scholar
[7] Tsuda, S. and Kuwano, Y., Jpn. J. Appl. Phys., 26, 33(1987)Google Scholar
[8] Beyer, W., J. Non-Cryst. Solids, 77&78, 857 (1985)Google Scholar