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High-Quality Amorphous Silicon Carbide Prepared by a New Fabrication Method for a Window P-Layer of Solar Cells

  • K. Ninomiya (a1), H. Haku (a1), H. Tarui (a1), N. Nakamura (a1), M. Tanaka (a1), K. Wakisaka (a1), S. Tsuda (a1), H. Nishiwaki (a1), S. Nakano (a1) and Y. Kuwano (a1)...

Abstract

A total area conversion efficiency of 11.1% has been achieved for a 1Ocm×1Ocm integrated-type single-junction a-Si solar cell submodule using a high-quality wide-bandgap p-layer doped with B(CH3)3 and other advanced techniques. This is the highest conversion efficiency ever reported for an a-Si solar cell with an area of 100cm2. As for a multi-junction solar cell, 12.1% was obtained for a 1cm2 cell with a high-quality wide-bandgap a-Si i-layer. The layer was fabricated by a hydrogen dilution method at a low substrate temperature for a front active layer of an a-Si/a-Si/a-SiGe stacked solar cell.

For further improvement in conversion efficiency, a wider-bandgap a-SiC was developed using a novel plasma CVD method, called the CPM (Controlled Plasma Magnetron) method. From XPS and IR measurements, the resultant films were found to have high Si-C bond density and low Si-H bond density, p-type a-SiC was fabricated using the post-doping technique, and dark conductivity more than 10-5(Q. cm)-1 was obtained (Eopt3 ≥ 2eV; Eopt2 2.2eV), whereas that of conventional p-type a-SiC is less than 10-6(Ω·cm)-1. These properties are very promising for application to the p-layers of advanced a-Si solar cells.

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High-Quality Amorphous Silicon Carbide Prepared by a New Fabrication Method for a Window P-Layer of Solar Cells

  • K. Ninomiya (a1), H. Haku (a1), H. Tarui (a1), N. Nakamura (a1), M. Tanaka (a1), K. Wakisaka (a1), S. Tsuda (a1), H. Nishiwaki (a1), S. Nakano (a1) and Y. Kuwano (a1)...

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