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High-Quality Amorphous Silicon Carbide Prepared by a New Fabrication Method for a Window P-Layer of Solar Cells

Published online by Cambridge University Press:  25 February 2011

K. Ninomiya ,
H. Haku ,
H. Tarui ,
N. Nakamura ,
M. Tanaka ,
K. Wakisaka ,
S. Tsuda ,
H. Nishiwaki ,
S. Nakano  and
Y. Kuwano
K. Ninomiya
Affiliation:
Sanyo Electric Co., Ltd., Functional Materials Research Center 1–18–13, Hashiridani, Hirakata, Osaka, 573, Japan
H. Haku
Affiliation:
Sanyo Electric Co., Ltd., Functional Materials Research Center 1–18–13, Hashiridani, Hirakata, Osaka, 573, Japan
H. Tarui
Affiliation:
Sanyo Electric Co., Ltd., Functional Materials Research Center 1–18–13, Hashiridani, Hirakata, Osaka, 573, Japan
N. Nakamura
Affiliation:
Sanyo Electric Co., Ltd., Functional Materials Research Center 1–18–13, Hashiridani, Hirakata, Osaka, 573, Japan
M. Tanaka
Affiliation:
Sanyo Electric Co., Ltd., Functional Materials Research Center 1–18–13, Hashiridani, Hirakata, Osaka, 573, Japan
K. Wakisaka
Affiliation:
Sanyo Electric Co., Ltd., Functional Materials Research Center 1–18–13, Hashiridani, Hirakata, Osaka, 573, Japan
S. Tsuda
Affiliation:
Sanyo Electric Co., Ltd., Functional Materials Research Center 1–18–13, Hashiridani, Hirakata, Osaka, 573, Japan
H. Nishiwaki
Affiliation:
Sanyo Electric Co., Ltd., Functional Materials Research Center 1–18–13, Hashiridani, Hirakata, Osaka, 573, Japan
S. Nakano
Affiliation:
Sanyo Electric Co., Ltd., Functional Materials Research Center 1–18–13, Hashiridani, Hirakata, Osaka, 573, Japan
Y. Kuwano
Affiliation:
Sanyo Electric Co., Ltd., Functional Materials Research Center 1–18–13, Hashiridani, Hirakata, Osaka, 573, Japan
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Abstract

A total area conversion efficiency of 11.1% has been achieved for a 1Ocm×1Ocm integrated-type single-junction a-Si solar cell submodule using a high-quality wide-bandgap p-layer doped with B(CH3)3 and other advanced techniques. This is the highest conversion efficiency ever reported for an a-Si solar cell with an area of 100cm2. As for a multi-junction solar cell, 12.1% was obtained for a 1cm2 cell with a high-quality wide-bandgap a-Si i-layer. The layer was fabricated by a hydrogen dilution method at a low substrate temperature for a front active layer of an a-Si/a-Si/a-SiGe stacked solar cell.

For further improvement in conversion efficiency, a wider-bandgap a-SiC was developed using a novel plasma CVD method, called the CPM (Controlled Plasma Magnetron) method. From XPS and IR measurements, the resultant films were found to have high Si-C bond density and low Si-H bond density, p-type a-SiC was fabricated using the post-doping technique, and dark conductivity more than 10-5(Q. cm)-1 was obtained (Eopt3 ≥ 2eV; Eopt2 2.2eV), whereas that of conventional p-type a-SiC is less than 10-6(Ω·cm)-1. These properties are very promising for application to the p-layers of advanced a-Si solar cells.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 242: Symposium G – Wide Band-Gap Semiconductors , 1992 , 663
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

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