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High-Q integrated RF passives and RF-MEMS on silicon


A technology platform is described for the integration of low-loss inductors, capacitors, and MEMS capacitors on a high-resistivity Si substrate. Using this platform the board space area taken up by e.g. a DCS PA output impedance matching circuit can be reduced by 50%. The losses of passive components that are induced by the semi-conducting Si substrate can effectively be suppressed using a combination of surface amorphisation and the use of poly crystalline Si substrates. A MEM switchable capacitor with a capacitance switching factor of 40 and an actuation voltage of 5V is demonstrated. A continuous tuneable dual-gap capacitor is demonstrated with a tuning ratio of 9 using actuation voltages below 15V.



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[1] Pulsford, N., RF Design magazine, Nov. 2002, p. 40
[2] Tilmans, H., de Raedt, W., Beyne, E., Proc. MME 2002, Oct. 68, 2002 Sinaia, Romania
[3] Rijks, Th., van Beek, J.T.M., Ulenaers, M.J.E., de Coster, J., den Dekker, A., van Teeffelen, L., Proc. ESSCIRC 2003, Estoril, Portugal Sept. 16–18 2003, p. 269
[4] Barker, N., Rebeiz, M., IEEE Trans. Microwave Theory, V46, No.11, 1998
[5] van Beek, J.T.M., van Delden, M.H.W.M., Jansman, A.B.M., Boogaard, A., Kemmeren, A. A.L.A.M., Pulsford, N., den Dekker, A., Proc. IMAPS2001, Baltimore, USA, 9–11 Oct. 2001, pp. 467470.
[6] Jansman, A.B.M., van Beek, J.T.M., van Delden, M.H.W.M., Kemmeren, A.L.A.M. and den Dekker, A., Proc. ESSDERC 2003, Estoril, Portugal Sept. 1618, 2003
[7] van Beek, J.T.M., van Delden, M.H.W.M., van Dijken, A., van Eerd, P., van Grootel, M., Jansman, A.B.M., Kemmeren, A.L.A.M., Rijks, Th. G.S.M., Steeneken, P.G., den Toonder, J., Ulenaers, M., den Dekker, A., Lok, P., Pulsford, N., van Straten, F., van Teeffelen, L., De Coster, J., Puers, R., Proc. BCTM 2003, Toulouse, France 28–30 Sept. 2003, pp. 147150
[8] Wolf, S., “Silicon Processing”, Lattice Press, p. 5
[9] Nix, W., Metallurgical Transactions A, V20A, pp. 19892217
[10] Zou, J., Liu, C., Schutt-Aine, J., Chen, J.H., Kang, S.M., proc. IEDM 2000, p. 403.
[11] Nieminnen, H., Ryhanen, T., Ermolov, V., Silanto, S., US patent no.6557413B2
[12] De Coster, J.; Puers, R., Tilmans, H.A.C., van Beek, J.T.M., and Rijks, Th. G.S.M., TRANSDUCERS, 12th Int. Conf. on Solid-State Sensors, Actuators and Microsystems, 2003, Vol. 2, pp. 1784.
[13] Rijks, Th. G.S.M., van Beek, J.T.M., Steeneken, P.G., Ulenaers, M.J.E., De Coster, J., Puers, R., proc. MEMS 2004, Maastricht, Netherlands Jan. 2529, 2004, to be published


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