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High-Q integrated RF passives and RF-MEMS on silicon

Published online by Cambridge University Press:  01 February 2011

Joost T.M. van Beek ,
Marc H.W.M. van Delden ,
Auke van Dijken ,
Patrick van Eerd ,
Andre B.M. Jansman ,
Anton L.A.M. Kemmeren ,
Theo G.S.M. Rijks ,
Peter G. Steeneken ,
Jaap den Toonder  and
Mathieu J.E. Ulenaers
...Show all authors
Joost T.M. van Beek
Affiliation:
Philips Research, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands
Marc H.W.M. van Delden
Affiliation:
Philips Research, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands
Auke van Dijken
Affiliation:
Philips Research, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands
Patrick van Eerd
Affiliation:
Philips Research, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands
Andre B.M. Jansman
Affiliation:
Philips Research, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands
Anton L.A.M. Kemmeren
Affiliation:
Philips Research, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands
Theo G.S.M. Rijks
Affiliation:
Philips Research, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands
Peter G. Steeneken
Affiliation:
Philips Research, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands
Jaap den Toonder
Affiliation:
Philips Research, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands
Mathieu J.E. Ulenaers
Affiliation:
Philips Research, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands
Arnold den Dekker
Affiliation:
Philips Semiconductors, Gerstweg 2, 6534 AE Nijmegen, The Netherlands
Pieter Lok
Affiliation:
Philips Semiconductors, Gerstweg 2, 6534 AE Nijmegen, The Netherlands
Nick Pulsford
Affiliation:
Philips Semiconductors, Gerstweg 2, 6534 AE Nijmegen, The Netherlands
Freek van Straten
Affiliation:
Philips Semiconductors, Gerstweg 2, 6534 AE Nijmegen, The Netherlands
Lenhard van Teeffelen
Affiliation:
Philips Semiconductors, Gerstweg 2, 6534 AE Nijmegen, The Netherlands
Jeroen de Coster
Affiliation:
Katholieke Universiteit Leuven, Dept. Electrical Engineering ESAT-MICAS, Belgium
Robert Puers
Affiliation:
Katholieke Universiteit Leuven, Dept. Electrical Engineering ESAT-MICAS, Belgium
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Abstract

A technology platform is described for the integration of low-loss inductors, capacitors, and MEMS capacitors on a high-resistivity Si substrate. Using this platform the board space area taken up by e.g. a DCS PA output impedance matching circuit can be reduced by 50%. The losses of passive components that are induced by the semi-conducting Si substrate can effectively be suppressed using a combination of surface amorphisation and the use of poly crystalline Si substrates. A MEM switchable capacitor with a capacitance switching factor of 40 and an actuation voltage of 5V is demonstrated. A continuous tuneable dual-gap capacitor is demonstrated with a tuning ratio of 9 using actuation voltages below 15V.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 783: Symposium B – Materials, Intergration, and Packaging Issues for High-Frequency Devices , 2003 , B3.1
Copyright
Copyright © Materials Research Society 2004

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References

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