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High-Pressure Raman Scattering of Biaxially Strained GaN on GaAs

Published online by Cambridge University Press:  10 February 2011

H. Siegle ,
A. R. Goñi ,
C. Thomsen ,
C. Ulrich ,
K. Syassen ,
K. Schöttker ,
D. J. As  and
D. Schikora
H. Siegle
Affiliation:
Institut für Festkörperphysik, TU Berlin, Hardenbergstraβe 36, 10623 Berlin, Germany
A. R. Goñi
Affiliation:
Institut für Festkörperphysik, TU Berlin, Hardenbergstraβe 36, 10623 Berlin, Germany
C. Thomsen
Affiliation:
Institut für Festkörperphysik, TU Berlin, Hardenbergstraβe 36, 10623 Berlin, Germany
C. Ulrich
Affiliation:
Max-Planck-Institut für Festkörperforschung, Stuttgart, Germany
K. Syassen
Affiliation:
Max-Planck-Institut für Festkörperforschung, Stuttgart, Germany
K. Schöttker
Affiliation:
Institut für Optoelektronik, GHS Paderborn, Germany
D. J. As
Affiliation:
Institut für Optoelektronik, GHS Paderborn, Germany
D. Schikora
Affiliation:
Institut für Optoelektronik, GHS Paderborn, Germany
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Abstract

We present results of high-pressure Raman-scattering experiments on bulk GaN and GaN grown on GaAs. We determined the Grüneisen parameters of both the cubic TO and LO phonon modes and the hexagonal A1, E1 and E2 modes. Our measurements reveal that the Grüneisen parameters for the GaAs substrate are about 30% smaller than those of bulk GaAs. This is a consequence of the lower compressibility of GaN compared to GaAs, which results in a pressure-induced biaxial strain on the substrate. From the pressure behavior of the GaAs modes and by comparing with our results for bulk GaN we obtained information about the biaxial strain in the GaN epitaxial layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 468: Symposium D – Gallium Nitride and Related Materials II , 1997 , 225
Copyright
Copyright © Materials Research Society 1997

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References

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