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High-power Organic Field-effect Transistors Using a Three-dimensional Structure

  • M. Uno (a1), Yuri Hirose (a2), Kengo Nakayama (a3), Takafumi Uemura (a4), Yasuhiro Nakazawa (a5), K. Takimiya (a6) and Jun Takeya (a7)...

Abstract

Three-dimensional organic field-effect transistors with multiple sub-micrometer channels are developed to exhibit high current density and high switching speed. The sub-micrometer channels are arranged perpendicularly to substrates and are defined by the height of a multi-columnar structure fabricated without using electron-beam-lithography technique. For devices with dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene, extremely high current density exceeding 10 A/cm2 and fast switching within 200 ns are realized with an on-off ratio of 105. The unprecedented performance is beyond general requirements to control organic light-emitting diodes, so that even more extensive applications to higher-speed active-matrices and display-driving circuits can be realized with organic semiconductors.

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Keywords

High-power Organic Field-effect Transistors Using a Three-dimensional Structure

  • M. Uno (a1), Yuri Hirose (a2), Kengo Nakayama (a3), Takafumi Uemura (a4), Yasuhiro Nakazawa (a5), K. Takimiya (a6) and Jun Takeya (a7)...

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