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High-Power Characteristics of GaN/InGaN Double Heterojunction Bipolar Transistors with a Regrown p-InGaN Base Layer

Published online by Cambridge University Press:  01 February 2011

Toshiki Makimoto ,
Yoshiharu Yamauchi  and
Kazuhide Kumakura
Toshiki Makimoto
Affiliation:
NTT Basic Research Laboratories, NTT Corporation 3–1 Morinosato Wakamiya, Atsugi-shi, Kanagawa 243–0198, Japan
Yoshiharu Yamauchi
Affiliation:
NTT Basic Research Laboratories, NTT Corporation 3–1 Morinosato Wakamiya, Atsugi-shi, Kanagawa 243–0198, Japan
Kazuhide Kumakura
Affiliation:
NTT Basic Research Laboratories, NTT Corporation 3–1 Morinosato Wakamiya, Atsugi-shi, Kanagawa 243–0198, Japan
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Abstract

We have investigated high-power characteristics of GaN/InGaN double heterojunction bipolar transistors on SiC substrates grown by metalorganic vapor phase epitaxy. The p-InGaN extrinsic base layers were regrown to improve ohmic characteristics of the base. Base-collector diodes showed low leakage current at their reverse bias voltages due to a wide bandgap of a GaN collector, resulting in a high-voltage transistor operation. A 90 μm × 50 μm device operated up to a collector-emitter voltage of 28 V and a collector current of 0.37 A in its common-emitter current-voltage characteristics at room temperature, which corresponds to a DC power of 10.4 W. A collector current density and a power density are as high as 8.2 kA/cm2 and 230 kW/cm2, respectively. These results show that nitride HBTs are promising for high-power electronic devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 798: Symposium Y – GaN and Related Alloys , 2003 , Y7.4
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

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