Skip to main content Accessibility help
×
Home

High-Performance InAs/GaAs Quantum Dots Infrared Photodetector With/Without Al0.2Ga0.8As Blocking Layers

  • Zhengmao Ye (a1), Joe C. Campbell (a1), Zhonghui Chen (a2), O. Baklenov (a2), E. T. Kim (a2), I. Mukhametzhanov (a2), J. Tie (a2) and A. Madhukar (a2)...

Abstract

InAs/AlGaAs quantum dot infrared photodetectors based on bound-to-bound intraband transitions in undoped InAs quantum dots are reported. AlGaAs blocking layers were employed to achieve low dark current. The photoresponse peaked at 6.2 μm. At 77 K and –0.7 V bias the responsivity was 14 mA/W and the detectivtiy, D*, was 1010 cmHz1/2/W.

Copyright

References

Hide All
[1] Ryzhii, V., Sci. Technol. 11, 759 (1996)
[2] Pan, D., Towe, E., and Kennerly, S., Appl. Phys. Lett. 75, 2719 (1999).
[3] Kim, S., Mohseni, H., Erdtmann, M., Michel, E., Jelen, C., and Razeghi, M., Appl. Phys. Lett. 73, 963 (1998).
[4] Phillips, J., Bhattacharya, Pallab, Kennerly, S.w., Beekman, D.W. and Dutta, M., IEEE J. Quant. Electron. 35, 936 (1999).
[5] Kim, Jong-Wook Oh, Jae-Eung, Hong, Seomg-Chul, Park, Chung-Hoon and Yoo, Tae-Kyung, IEEE Electron Device Letter, 21, No. 7, 329 (2000).
[6] Baklenov, O., Chen, Z.H., Kim, E.T., Mukhametzhanov, I., Madhukar, A., Ma, F., Ye, Z., Yang, B., and Campbell, J., the 58th IEEE Device Research Conference, (Denver, Colorado, June 19–21, 2000), p171; Z.H. Chen, O. Baklenov, E.T. Kim, I. Mukhametzhanov, J. Tie, A. Madhukar, Z. Ye, and J. Campbell, Proceeding of QWIP2000 Workshop, Dana Point, CA, July 2000, Infrared Physics & Technology, 42, 479 (2001)
[7] Chen, Z.H., Baklenov, O., Kim, E. T., Mukhametzhanov, I., Tie, J., Madhukar, A., Ye, Z. and Campbell, J. C., J. Appl. Phys. 89, 4558 (2001).
[8] Wang, S. Y., Lin, S. D., Wu, H. W., and Lee, C. P., Appl. Phys. Lett., 78, 1023 (2001).
[9] Lin, Shih-Yen, Tsai, Yau-Ren, and Lee, Si-chen, Appl. Phys. Lett., 78, 2784 (2001).
[10] Stiff, A.D., Krishna, S., Bhattacharya, P., and Kennerly, S., Appl. Phys. Lett. 79, 421 (2001)
[11] Mukhametzhanov, I., Wei, Z., Rheitz, , and Madhukar, A., Appl. Phys. Lett., 75, 85 (1999).
[12] Mukhametzhanov, I., Chen, Z.H., Baklenov, O., Kim, E.T., and Madhukar, A., Phys. Status Solidi (b) 224, 697 (2001)

High-Performance InAs/GaAs Quantum Dots Infrared Photodetector With/Without Al0.2Ga0.8As Blocking Layers

  • Zhengmao Ye (a1), Joe C. Campbell (a1), Zhonghui Chen (a2), O. Baklenov (a2), E. T. Kim (a2), I. Mukhametzhanov (a2), J. Tie (a2) and A. Madhukar (a2)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed