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Highly-Insulating Ultra-Thin SiO2 Film Grown by VUV Photo-Oxidation

Published online by Cambridge University Press:  17 March 2011

Atsuyuki Fukano  and
Hiroyuki Oyanagi
Atsuyuki Fukano
Affiliation:
National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
Hiroyuki Oyanagi
Affiliation:
National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Abstract

Insulating performance of high-density SiO2 films on Si(100) wafer grown by VUV irradiation in oxygen atmosphere at low-temperatures (300 ∼ 400°C) is reported. Comparing the SiO2 films grew with various wavelength irradiation, i.e., 126, 172 and 222nm, we found a strong wavelength dependence in density and insulating performance. The results suggest that electrical characteristics are highly correlated with film density. Higher density films are formed by shorter wavelength photo-oxidation whereas higher breakdown voltage and lower leakage current are achieved by the dense films. This shows that lower density of defects, dangling bonds, existing at the Si-O interface strongly affects the insulating performance. VUV photo-oxidation is a promising silicon oxide growth technique with greater insulating performance beyond the conventional limit for thermally oxidized films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 811: Symposia D/E – Integration of Advanced Micro-and Nanelectronic Devices-Critical Issues and Solutions , 2004 , E1.3
Copyright
Copyright © Materials Research Society 2004

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References

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