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Highly Reliable Metal Gate nMOSFETs by Improved CVD-WSix films with Work Function of 4.3eV

  • Kazuaki Nakajima (a1), Hiroshi Nakazawa (a2), Katsuyuki Sekine (a2), Kouji Matsuo (a2), Tomohiro Saito (a2), Tomio Katata (a2), Kyoichi Suguro (a2) and Yoshitaka Tsunashima (a2)...

Abstract

In this paper, we first propose an improved CVD-WSix metal gate suitable for use with nMOSFETs. Work function of CVD-WSi3.9 gate estimated from C-V measurements was 4.3eV. The nMOSFET using CVD-WSi3.9 gate electrode showed that Vth variation of L/W=1 μm/10μm nMOSFETs can be suppressed to be lower than 8mV in 22chip. In CVD-WSi3.9 gate MOSFETs with gate length of 50nm, a drive current of 636μA/μm was achieved for off-state leakage current of 35nA/μm at 1.0V of power supply voltage. By using CVD-WSi3.9 gate electrode, highly reliable metal gate nMOSFETs can be realized.

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Highly Reliable Metal Gate nMOSFETs by Improved CVD-WSix films with Work Function of 4.3eV

  • Kazuaki Nakajima (a1), Hiroshi Nakazawa (a2), Katsuyuki Sekine (a2), Kouji Matsuo (a2), Tomohiro Saito (a2), Tomio Katata (a2), Kyoichi Suguro (a2) and Yoshitaka Tsunashima (a2)...

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