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High Throughput X-ray Diffractometer for Combinatorial Epitaxial Thin Films

Published online by Cambridge University Press:  17 March 2011

M. Ohtani ,
T. Fukumura ,
A. Ohtomo ,
T. Kikuchi ,
K. Omote ,
H. Koinuma  and
M. Kawasaki
M. Ohtani
Affiliation:
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama 226-8503, Japan
T. Fukumura
Affiliation:
Institute for Materials Research, Tohoku Univ., Sendai 980-8577, Japan
A. Ohtomo
Affiliation:
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama 226-8503, Japan
T. Kikuchi
Affiliation:
X-ray Research Laboratory, Rigaku Corporation, Akishima 196-8666, Japan
K. Omote
Affiliation:
X-ray Research Laboratory, Rigaku Corporation, Akishima 196-8666, Japan
H. Koinuma
Affiliation:
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama 226-8503, Japan Frontier Collaborative Research Center, Tokyo Institute of Technology, Yokohama 226-8503, Japan Combinatorial Material Exploration and Technology (COMET), Tsukuba 305-8565, Japan
M. Kawasaki
Affiliation:
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, Yokohama 226-8503, Japan Institute for Materials Research, Tohoku Univ., Sendai 980-8577, Japan Combinatorial Material Exploration and Technology (COMET), Tsukuba 305-8565, Japan
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Abstract

We report on the development of a high throughput x-ray diffractometer that concurrently measures spatially resolved x-ray diffraction (XRD) spectra of epitaxial thin films integrated on a substrate. A convergent x-ray is focused into a stripe on a substrate and the diffracted beam is detected with a two-dimensional x-ray detector, so that the snapshot image represents a mapping of XRD intensity with the axes of the diffraction angle and the position in the sample. High throughput characterization of crystalline structure is carried out for a BaxSr1-xTiO3 composition-spread film on a SrTiO3 substrate. Not only the continuous spread of the composition (x), but also the continuous spread of the growth temperature (T) are given to the film by employing a special heating method. The boundary between the strained lattice and relaxed lattice is visualized by the concurrent XRD as functions of x and T in a high throughput fashion.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 700: Symposium S – Combinatorial and Artificial Intelligence Methods in Materials Science , 2001 , S3.8
Copyright
Copyright © Materials Research Society 2002

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References

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