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High Throughput Optimization of Y-Type Magnetoplumbite Epitaxial thin Film Growth by Combinatorial Pulsed Laser Deposition Technique

Published online by Cambridge University Press:  17 March 2011

I. Ohkubo ,
Y. Matsumoto ,
M. Ohtani ,
T. Hasegawa ,
K. Ueno ,
K. Itaka ,
A. Parhat ,
T. Chikyow ,
M. Kawasaki  and
H. Koinuma
I. Ohkubo
Affiliation:
Materials and Structures Laboratory, Tokyo Institute of Technology 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
Y. Matsumoto
Affiliation:
Materials and Structures Laboratory, Tokyo Institute of Technology 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
M. Ohtani
Affiliation:
Materials and Structures Laboratory, Tokyo Institute of Technology 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
T. Hasegawa
Affiliation:
Materials and Structures Laboratory, Tokyo Institute of Technology 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
K. Ueno
Affiliation:
Central Technology Laboratory, ASAHI KASEI CORPORATION, 2-1 Samejima, Fuji, Shizuoka, 416-8501, Japan
K. Itaka
Affiliation:
COMET-NIMS, 1-1 Namiki, Tsukuba, Ibaraki,305-0044, Japan
A. Parhat
Affiliation:
COMET-NIMS, 1-1 Namiki, Tsukuba, Ibaraki,305-0044, Japan
T. Chikyow
Affiliation:
COMET-NIMS, 1-1 Namiki, Tsukuba, Ibaraki,305-0044, Japan
M. Kawasaki
Affiliation:
COMET-NIMS, 1-1 Namiki, Tsukuba, Ibaraki,305-0044, Japan Institute for Materials Research, Tohoku University, Sendai, 980-8577, Japan
H. Koinuma
Affiliation:
Materials and Structures Laboratory, Tokyo Institute of Technology 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan COMET-NIMS, 1-1 Namiki, Tsukuba, Ibaraki,305-0044, Japan Frontier Collaborative Research Center Tokyo Institute of Technology 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan and CREST-Japan Science and Technology corporation, 3-4-1 Ohkubo, Japan
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Abstract

Thin films of Y-type magnetoplumbite (Ba2Co2Fe12O22: Co2Y) with such a huge unit cell length as 43.5 Å has been successfully fabricated for the first time with the aid of combinatorial optimization of pulsed laser deposition process. Planning a thickness gradient CoO buffer layer on MgAl2O4(111) substrate was very effective for prevent the phase separation of Co deficient impurity (BaFe2O4) to reside in the formation of desired Co2Y phase.From the TEM analysis, the CoO buffer layer of optimum thickness was incorporated into the Co2Y film to make theinterface with the make an atomically sharp.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 700: Symposium S – Combinatorial and Artificial Intelligence Methods in Materials Science , 2001 , S2.9
Copyright
Copyright © Materials Research Society 2002

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