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High Temperature Implantation of Tm in GaN

Published online by Cambridge University Press:  01 February 2011

K. Lorenz ,
U. Wahl ,
E. Alves ,
S. Dalmasso ,
R. W. Martin  and
K. P. O'Donnell
K. Lorenz
Affiliation:
ITN, Estrada Nacional 10, 2686–953 Sacavém, Portugal
U. Wahl
Affiliation:
ITN, Estrada Nacional 10, 2686–953 Sacavém, Portugal
E. Alves
Affiliation:
ITN, Estrada Nacional 10, 2686–953 Sacavém, Portugal
S. Dalmasso
Affiliation:
Department of Physics, University of Strathclyde, Glasgow, G4 0NG, U.K.
R. W. Martin
Affiliation:
Department of Physics, University of Strathclyde, Glasgow, G4 0NG, U.K.
K. P. O'Donnell
Affiliation:
Department of Physics, University of Strathclyde, Glasgow, G4 0NG, U.K.
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Abstract

Thulium ions were implanted into MOCVD grown GaN films with a fluence of 2.5×1015 at/cm2 at temperatures between 20 and 500 °C. The lattice damage introduced by the implantation and the effect of post-implant annealing were investigated using the Rutherford backscattering/channeling (RBS/C) technique. Whereas for room temperature implantation the implanted layer becomes amorphous, high temperature implantation inhibits amorphisation. For implantation temperatures higher than 300 °C the RBS/C results clearly show two different damage regions - one at the surface and the second deeper in the crystal coinciding with the Tm depth profile. Annealing causes a decrease of the surface damage as well as initiating regrowth from the unimplanted bulk GaN. For the samples that were not completely amorphous a large part of the Tm atoms were found to be incorporated in Ga-sites. The optical properties of the ion implanted GaN films have been studied by room temperature cathodoluminescence. Directly following the implantation no Tm-related luminescence was observed. Subsequent annealing of the samples achieved optical activation, revealing well-defined emissions due to intra-4f-shell transitions of the Tm3+ ions in the blue spectral range at 477 nm and in the near infra-red at 804 nm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 798: Symposium Y – GaN and Related Alloys , 2003 , Y5.4
Copyright
Copyright © Materials Research Society 2004

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References

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