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High Temperature Implantation in Graphite

Published online by Cambridge University Press:  25 February 2011

G. Braunstein ,
B.S. Elman ,
M.S. Dresselhaus ,
G. Dresselhaus  and
T. Venkatesan
G. Braunstein
Affiliation:
Department of Physics;
B.S. Elman
Affiliation:
Department of Physics;
M.S. Dresselhaus
Affiliation:
Department of Physics; Department of Electrical Engineering and Computer Science;
G. Dresselhaus
Affiliation:
Francis Bitter National Magnet Laboratory;Massachusetts Institute of Technology, Cambridge, MA 02139, USA
T. Venkatesan
Affiliation:
Bell Laboratories, Murray Hill, NJ 07974, USA
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Abstract

In previous studies it was found that when highly oriented pyrolytic graphite (HOPG) is implanted at room temperature, the damage caused by the implantation could be completely annealed by heating the sample to temperatures higher than ∼ 2500°C. However at these high temperatures, the implanted species was found to diffuse out of the sample, as evidenced by the disappearance of the impurity peak in the Rutherford backscattering (RBS) spectrum. If, on the other hand, the HOPG crystal was held at a high temperature (≥ 600°C) during the implantation, partial annealing could be observed. The present work further shows that it is possible to anneal the radiation damage and simultaneously to retain the implants in the graphite lattice by means of high temperature implantation (Ti ≥ 450°C) followed by annealing at 2300°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 27: Symposium E – Ion Implantation and Ion Beam Processing of Materials , 1983 , 475
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

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