AlGaN photodiode detectors are grown on (0001) sapphire by RF atomic nitrogen plasma molecular beam epitaxy. Both individual detectors and 1 × 10 element arrays are fabricated. The individual detectors have active areas of 0.5 mm2, 1.0 mm2, and 2.0 mm2. Individual elements in the l × 10 detector arrays range in size from 250×250 μm to 450×450 μm. The detectors are fabricated using a chlorine-based reactive ion etch (RIE) and refractory metal ohmic contacts. At room temperature, GaN p-i-n photovoltaic detectors show peak responsivity at 360 nm as high as 0.198 A/W, corresponding to an internal quantum efficiency of 85%. These detectors also exhibit five orders of magnitude of rejection for radiation longer than 500 nm. The electrical and spectral characteristics of these detectors are examined at elevated temperatures. The short wavelength UV responsivity remains fairly constant at elevated temperatures, while the peak responsivity actually increases with increasing temperature. The smooth surface morphology of heavily doped p-type material grown by MBE makes possible diode structures with a p-type bottom layer. The effect of the spectrally broader p-type material in the photodiode responsivity will be discussed.